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US 5,179,567 AGranted
Semiconductor laser device, method of fabricating the same and optical system of utilizing the same
AssigneeHitachi, Ltd.
InventorsKazuhisa Uomi, Naoki Chinone, Masahiro Aoki
Life of this patent
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Abstract
A semiconductor laser device may include a structure formed separately of a light radiating region, and an electrode for injecting carriers over the light radiating region. A gap is formed between the light radiating region and the structure to introduce an air-bridge structure into the aforementioned electrode so that the capacitive component resulting from a presence of the electrode is drastically reduced.
Claims13
A semiconductor laser device comprising:
- a substrate;
- a mesa-stripe structure including an active region for radiating light formed on the substrate;
- a buried region formed on both sides of said mesa-stripe structure;
- a semiconductor region formed on the substrate and separated from said buried region by a gas;
- and
- a pair of electrodes for injecting carriers into said active region, a first of said electrodes having a bridge structure formed over both said mesa-stripe structure and said semiconductor region across the gas.
3 more elements
A semiconductor laser device comprising:
- a substrate;
- a mesa-stripe structure including an active region for radiating light formed on the substrate;
- a buried region formed on both sides of said mesa-stripe structure;
- a semiconductor region formed on the substrate apart from said buried region;
- a gap formed between said buried region and said semiconductor region;
- and
- a pair of electrodes for injecting carriers into said active region, a first of said electrodes having a bridge structure formed over both said mesa-stripe structure and said semiconductor region across the gap.
4 more elements
A semiconductor laser device comprising:
- a substrate having a grating thereon;
- a mesa-stripe structure including an active region for radiating light formed on the substrate;
- a semi-insulated region formed on both sides of said mesa-stripe structure;
- a semiconductor region formed on the structure apart from said semi-insulated region;
- a gap formed between said semi-insulated region and said semiconductor region;
- and
- a pair of electrodes for injecting carriers into said active region, one of said electrodes having a bridge structure formed over both said mesa-stripe structure and said semiconductor region across the gap.
4 more elements
Dependencies are inferred from the claim text.