US 5,179,430 AGranted

Planar type heterojunction avalanche photodiode

AssigneeNEC Corporation

InventorToshitaka Torikai

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Abstract

In a planar type heterojunction avalanche photodiode comprising a light absorbing layer of a first conduction type provided on a substrate of the first conduction type, an avalanche multiplication layer of the first conduction type provided on a side of the light absorbing layer which is opposite to the substrate, and a conduction region of a second conduction type in contact with the avalanche multiplication layer, a high reflection film is provided on a side of the conduction region which is opposite to the avalanche multiplication layer. An anti-reflection film to which light is supplied is provided on a side of the substrate which is opposite to the light absorbing layer. The light is absorbed in the light absorbing layer substantially, and the remaining light which is not absorbed in the light absorbing layer is reflected by the high reflection layer. The reflected light is absorbed in the light absorbing layer. Consequently, both a wide bandwidth and a high sensitivity are obtained.

Claims4

Dependent claims

In a planar type heterojunction avalanche photodiode comprising,

a light absorbing layer of a first conductivity type provided over one side of a substrate of a first conductivity type, said light absorbing layer having a predetermined band-gap energy;
an avalanche multiplication layer of said first conductivity type provided separated from but over a side of said light absorbing layer which is opposite to a side of said light absorbing layer facing said substrate, said avalanche multiplication layer having a band-gap energy wider than said predetermined band-gap energy;
a semiconductor layer of a second conductivity type in contact with said avalanche multiplication layer;
a high reflection film provided on a side of said semiconductor layer which is opposite to a side of said semiconductor layer which is in contact with said avalanche multiplication layer, said high reflection film including a dielectric film having a thickness of (2m-1).multidot..lambda./4 and a metal film formed thereon, where m is a positive integer and .lambda. the wavelength of light incident to an anti-reflection film;
an anti-reflection film provided on a side of said substrate which is opposite to said light absorbing layer, said anti-reflection film facing said high reflection film;
and
p- and n-electrodes connected to said semiconductor layer and substrate, respectively.

4 more elements

Dependencies are inferred from the claim text.