Semiconductor substrate having a superconducting thin film with a buffer layer in between
AssigneeSumitomo Electric Industries, Ltd.
InventorsKeizo Harada, Hideo Itozaki, Naoji Fujimori, Shuji Yazu, Tetsuji Jodai
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Abstract
A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.
Claims6
A semiconductor-superconductor composite consisting of a semiconductor substrate and a thin film of a superconducting material of a compound oxide whose critical temperature is higher than 30K, wherein said thin film is deposited on a buffer layer deposited on a surface of said semiconductor substrate and said buffer is a mixture of particles of Ag and/or Au and at least one oxide selected from the group consisting of ZrO.sub.2, MgO, and yttrium stabilized zirconia (YSZ).
Dependencies are inferred from the claim text.