Pattern forming and transferring processes
AssigneeBoard of Regents, The University of Texas System
InventorsAdam Heller, Joseph C. Carls, Panagiotis Argitis, John J. Meaux
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Abstract
Pattern forming and transferring processes using radiation sensitive materials based upon mixtures of polyoxometalates and organic compounds. The processes involve establishing a layer of such radiation sensitve material on one or more layers of underlying materials. A pattern is formed in the layer of radiation sensitive material by exposing selected areas of the layer to radiation. The pattern may then be transferred into the underlying layers of material. Methods for developing patterns in layers of radiation sensitive materials, so as to hinder leaching of etch resistant substances included in the radiation sensitive materials, are also provided.
Claims77
A process for transferring a pattern from a layer of radiation sensitive material into an underlying second material, comprising the steps of:
- establishing a layer of radiation sensitive material on a second material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate;
- forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation;
- and
- transferring the pattern into the underlying second material.
A process for transferring a pattern from a layer of radiation sensitive material into underlying layers of materials, comprising the steps of:
- establishing a layer of first material on a second material;
- establishing a layer of radiation sensitive material on the layer of first material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate;
- forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation;
- transferring the pattern into the underlying layer of first material;
- and
- transferring the pattern into the underlying second material.
A process for transferring a pattern from a layer of a first radiation sensitive material into a second radiation sensitive material, comprising the steps of:
- establishing a layer of a first radiation sensitive material on a radiation transparent material, the first radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate;
- photolithographically forming a pattern in the layer of first radiation sensitive material;
- reducing the polyoxometalate such that the patterned first radiation sensitive material becomes opaque to radiation;
- and
- transferring the pattern into a second radiation sensitive material by irradiating the second radiation sensitive material through the opaque pattern.
A process for making a mask for use in transferring a pattern by radiation, comprising the steps of:
- establishing a layer of radiation sensitive material on a radiation transparent material, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate;
- forming a pattern in the layer of radiation sensitive material by exposing selected areas of said layer to radiation;
- removing either the exposed or the unexposed areas of the layer of radiation sensitive material;
- and
- reducing the polyoxometalate in the remaining areas of the layer of radiation sensitive material such that said material becomes opaque to radiation.
A microlithographic process for transferring a pattern into a substrate, comprising:
- establishing a resist layer on a substrate, the resist comprising a mixture of an organic compound and a polyoxometalate;
- forming a pattern in the resist layer by exposing selected areas of the resist layer to radiation;
- developing the pattern in the resist layer;
- and
- transferring the pattern into the substrate.
A microlithographic process for etching a pattern into a substrate, comprising:
- establishing a layer of organic material on a substrate;
- establishing a resist layer on the layer of organic material, the resist comprising a mixture of an organic compound and a polyoxometalate;
- forming a pattern in the resist layer by exposing selected areas of the resist layer to radiation;
- developing the pattern in the resist layer;
- etching the pattern into the layer of organic material;
- and
- etching the pattern into the substrate.
A method for developing a layer of radiation sensitive material containing an etch resistant substance, said etch resistant substance comprising a polyoxometalate, in such a manner so as to hinder leaching of the etch resistant substance, the layer of radiation sensitive material including areas which have been exposed to radiation, the method comprising dissolving either the exposed areas or the unexposed areas of radiation sensitive material in a solution containing the etch resistant substance.
A method for developing a layer or radiation sensitive material containing an etch resistance substance, said etch resistant substance comprising a polyoxometalate, in such a manner so as to hinder leaching of the etch resistant substance, the layer of radiation sensitive material including areas which have been exposed to radiation, the method comprising dissolving either the exposed areas or the unexposed areas of radiation sensitive material in a solvent having a sufficiently high electrolyte concentration such that the undissolved areas of radiation sensitive material substantially do not swell in the solvent.
A process for forming an electrically conducting pattern on a surface, comprising the steps of:
- establishing a layer of radiation sensitive material on a surface, the radiation sensitive material comprising a mixture of an organic compound and a polyoxometalate;
- photolithographically forming a pattern in the layer of first radiation sensitive material;
- and
- oxidizing the organic compound and reducing the polyoxometalate such that the patterned layer becomes electrically conducting.
Dependencies are inferred from the claim text.