Acidic palladium strike bath
AssigneeAT&T Bell Laboratories
InventorsJoseph A. Abys, Heinrich K. Straschil
Life of this patent
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Abstract
This invention is an acid palladium strike bath which improves adhesion and porosity of subsequent platings of palladium or palladium alloys on metal substrates, especially those susceptible to passivation such as nickel, chromium, bronze and steel. The acid palladium strike bath which is useful for both low-speed and high speed plating operation includes a complexing agent selected from organic diamines and has a pH ranging from 2.0 to 6.0, preferably from 3.7 to 4.1. When used on easily corrodable substrates, such as copper, the palladium strike deposit protects the parts from chemical attack in the subsequent mainplating bath and prevents its contamination.
Claims23
An aqueous strike bath for producing a strike electrodeposit of palladium on an electrically conductive surface, which comprises from 0.1 to 30 grams per liter palladium, from 1 to 250 grams per liter of a complexing agent, from 10 to 200 grams per liter of a supporting electrolyte, from 20 to 350 grams per liter of a buffering agent, and from 0 to 50 ppm of a surfactant additive selected from non-ionic and cationic surfactants, which bath exhibits a pH value within a range of from 2.0 to about 4.3, in which said complexing agent comprises an organic diamine selected from the group consisting of 1,2-diaminobutane, 1,2-diaminopropane, 1,2-diamino-2-methylpropane, 1,2-diaminopentane, 1,2-diaminohexane, 2,3-diaminobutane, 2,3-diaminopentane, 2,3-diaminohexane, 3,4-diaminohexane, and higher aliphatic diamines with adjacent primary, secondary or tertiary amino groups, and in which said buffering agent is selected from the group consisting of acetic acid, citric acid, tartaric acid, tetraboric acid, acetoacetic acid, chloracetic acid, maleic acid, malic acid, itaconic acid, and their salts.
A process of plating an electrically conductive surface, which comprises electroplating on said surface at least two layers in succession comprising a palladium strike layer on said surface and a cover layer comprising a metal selected from the group consisting of palladium nickel alloy and palladium, gold, rhodium, ruthenium, platinum, silver and their alloys, wherein said palladium strike layer is deposited from an aqueous bath comprising from 0.1 to 30 grams per liter palladium, from 1 to 250 grams per liter of a complexing agent, from 10 to 200 grams per liter of a supporting electrolyte, from 50 to 350 grams per liter of a buffering agent, and from 0 to 50 ppm of an additive selected from non-ionic and cationic surfactants, which bath exhibits a pH value within a range of from 2 to about 4.3, in which said complexing agent comprises an organic diamine selected from the group consisting of 1,2-diaminobutane, 1,2-diaminopropane, 1,2-diamino-2-methylpropane, 1,2-diaminopentane, 1,2-diaminohexane, 2,3-diaminobutane, 2,3-diaminopentane, 2,3-diaminohexane, 3,4-diaminohexane, and higher aliphatic diamines with adjacent primary, secondary or tertiary amino groups, and in which said buffering agent is selected from the group consisting of acetic acid, citric acid, tartaric acid, tetraboric acid, acetoacetic acid, chloracetic acid, malic acid, malic acid, itaconic acid, and their salts.
A process of plating palladium strike on an electrically conductive surface of an article comprising the step of passing current through an article acting as a cathode, an aqueous strike bath and an anode, wherein the pH of the strike bath ranges from 2 to about 4.3, the strike bath comprises from 0.1 to 30 grams per liter palladium, from 1 to 250 grams per liter of a complexing agent, from 10 to 200 grams per liter of a supporting electrolyte, from 20 to 350 grams per liter of a buffering agent, and from 0 to 50 ppm of a surfactant additive selected from non-ionic and cationic surfactants, said complexing agent comprises an organic diamine selected from 1,2-diaminobutane, 1,2-diaminopropane, 1,2-diamino-2-methylpropane, 1,2-diaminopentane, 1,2-diaminohexane, 2,3-diaminobutane, 2,3-diaminopentane, 2,3-diaminohexane, 3,4-diaminohexane and higher aliphatic diamines with adjacent primary, secondary or tertiary amino groups, and said buffering agent is selected from the group consisting of acetic acid, citric acid, tartaric acid, tetraboric acid, acetoacetic acid, chloracetic acid, malic acid, malic acid, itaconic acid, and their salts.
Dependencies are inferred from the claim text.