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AssigneeU.S. Philips Corporation
InventorJan Visser
Estimating the term…
Apparatus and method is set forth for treating a flat substrate (10), more particularly a semiconductor wafer in the manufacture of integrated circuits, under reduced pressure comprising a vacuum chamber (2a, 2b) provided with a substrate support (11) having a body (11a) with heating and/or cooling means (12) and a supporting surface (11b) at which a plurality of injection openings (20) is present communicating with an injection space (12) and a supplementary gas inlet (28), through which injection openings a gas is supplied between the substrate and the supporting surface for forming a heat-exchanging gas cushion therebetween. At the supporting surface (11b) also a plurality of exhaust openings (29) is present communicating with an exhaust space (24) and an exhaust outlet (18) through which exhaust openings gas form between the substrate (10) and the supporting surface is exhausted, so that, while maintaining the gas cushion, gas injected through each of the injection openings is exhausted through adjacent openings. Thus the injected gas practically will not reach the periphery of the substrate and thus does not interfere with gases in the reaction chamber.
Apparatus for treating a flat substrate (10) under reduced pressure comprising a vacuum chamber (2a, 2b) provided with a substrate support (11) having a body (11a) with heating and cooling means (12) and a supporting surface (11b) at which a plurality of injection openings (20) is present communicating with an injection space (21) and a supplementary gas inlet (28), through which injection openings a gas can be supplied between the substrate and the supporting surface for forming a heat-exchanging gas cushion therebetween, characterized in that at the supporting surface (11b) also a plurality of exhaust openings (29) is present communicating with an exhaust space (24) and an exhaust outlet (18) through which exhaust openings gas formed between the substrate (10) and the supporting surface can be exhausted, so that, while maintaining the gas cushion, gas injected through each of the injection openings is exhausted through adjacent exhaust openings.
Workpiece carrier for a disk-shaped workpiece to be subjected to a surface treatment, comprising a workpiece support, which constitutes a supporting surface for the workpiece, a heating and/or cooling means for the workpiece support, a plurality of emanation openings, which are distributed along and merge into the supporting surface and communicate with a distributor space, and a gas inlet connected to the distributor space for supplying a gas via the distributor space and the emanation openings for forming a heat-transferring gas cushion between the supporting surface and the workpiece, characterized in that in addition to the emanation openings (258) a plurality of exhaust openings (259) merge into the supporting surface, which communicate with a gas exhaust space (260), to which a gas exhaust outlet is connected.
Workpiece carrier for a disk-shaped workpiece to be subjected to a surface treatment, comprising a workpiece support, which constitutes a supporting surface for the workpiece, a heating and/or cooling means for the workpiece support, a plurality of emanation openings, which are distributed along and merge into the supporting surface and communicate with a distributor space, and a gas inlet connected to the distributor space for supplying a gas via the distributor space and the emanation openings for forming a heat-transferring gas cushion between the supporting surface and the workpiece, characterized in that in addition to the emanation openings (258) a plurality of exhaust openings (259) merge into the supporting surface, which communicate with a gas exhaust space (260), to which a gas exhaust outlet is connected and a vacuum processing chamber for treating workpieces comprising at least one said workpiece carrier.
Method of manufacturing electronic devices, in which a flat substrate is treated under reduced pressure in a vacuum chamber (2a, 2b) provided with a substrate support (11) having a body (11a) with heating and/or cooling means (12) and a supporting surface (11b) at which a plurality of injection openings (20) in present communicating with an injection space (12) and a supplementary gas inlet (28), in which method through said injection openings a gas is supplied between the substrate and the supporting surface for forming a heat-exchanging gas cushion therebetween, characterized in that, through a plurality of exhaust openings (29), which are also present as the supporting surface (11b) and which are communicating with an exhaust space (24) and an exhaust outlet (18), gas from between the substrate and the supporting surface is exhausted, so that, while maintaining the gas cushion, gas injected through each of the injection openings is exhausted through adjacent exhaust openings.
Dependencies are inferred from the claim text.