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US 5,177,752 AGranted
Optical pulse generator using gain-switched semiconductor laser
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsJun Ohya, Tetsuo Taniguchi
Life of this patent
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Abstract
Ultrashort optical pulses of a high peak output are generated by gain-switching of a semiconductor laser possessing a current non-injection region with short current pulses. By coupling this semiconductor laser to a wavelength conversion element, a second harmonic wave is generated, and ultrashort optical pulses of a short wavelength and a high peak output are generated.
Claims9
An optical pulse generator for generating ultrashort optical pulses comprising:
- a semiconductor laser having a resonant cavity containing at least an active layer, cladding layer and a pair of electrodes, wherein said resonant cavity includes a current injection region having said pair of electrodes for injecting current into said active layer and a current non-injection region which is devoid of electrodes;
- a pulse current source for injecting pulse current into said current injection region for generating laser light;
- and a wavelength conversion element comprising an optical waveguide which is disposed in a surface portion of said wavelength conversion element;
- wherein said optical waveguide is aligned so as to generate a second harmonic wave of a fundamental wave from said optical waveguide, when the fundamental wave is coupled to said optical waveguide and is guided by said optical waveguide;
- whereby a gain in said current injection region increases and an absorption in said current non-injection region decreases in gain-switching manner so as to generate ultrashort optical pulses and whereby said ultrashort optical pulse guided in said optical waveguide serves as a fundamental wave for said wavelength conversion element;
- and whereby ultrashort optical pulses as the second harmonic wave of the fundamental wave are outputted from said optical waveguide.
3 more elements
An optical pulse generator for generating ultrashort optical pulses comprising:
- a semiconductor laser having a resonant cavity containing at least an active layer, a cladding layer and two pair of electrodes, wherein said resonant cavity includes a current injection region having one pair of said two pair of electrodes for injecting current into said active layer and a current non-injection region having said other pair of electrodes for applying a reverse bias voltage to said active layer, wherein said current injection region and said current non-injection region are electrically isolated from each other;
- a pulse current source for injecting pulse current into said current injection region for generating laser light;
- a voltage source for applying a reverse bias voltage to said current non-injection region for controlling the absorption coefficient of laser light;
- and
- a wavelength conversion element comprising an optical waveguide which is disposed in a surface portion of said wavelength conversion element;
- wherein said optical waveguide is aligned so as to generate a second harmonic wave of a fundamental wave from said optical waveguide, when the fundamental wave is coupled to said optical waveguide and is guided by said optical waveguide;
- whereby a gain in said current injection region increases and an absorption in said current non-injection region decreases in a gain-switching manner so as to generate ultrashort optical pulses and whereby said ultrashort optical pulse guided in said optical waveguide serves as a fundamental wave for said wavelength conversion element;
- and
- whereby ultrashort optical pulses consisting of the second harmonic wave of the fundamental wave are outputted from said optical waveguide.
6 more elements
Dependencies are inferred from the claim text.