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US 5,177,661 AGranted
SOI diaphgram sensor
AssigneeKopin Corporation
InventorsPaul M. Zavracky, Richard H. Morrison, Jr.
Life of this patent
Estimating the term…
Abstract
The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.
Claims18
A pressure sensor comprising:
- a supporting substrate;
- an insulating layer formed on the substrate, the insulating layer having a cavity formed therein;
- a flexible diaphragm positioned over the cavity, the diaphragm being formed in a layer of single crystal or essentially single crystal silicon material positioned on the insulating layer;
- insulator clamps extending through the silicon layer and the insulator layer along a peripheral portion of the diaphragm, each clamp being positioned adjacent to the cavity and attached to the diaphragm for supporting the diaphragm over the cavity, each clamp being formed of an electrical insulator for electrically isolating the diaphragm from the substrate;
- and
- a monitoring circuit formed in or on the diaphragm such that displacement of the diaphragm alters an electrical characteristic of the circuit.
3 more elements
A pressure sensor comprising:
- a semiconductor substrate;
- a layer of insulating material formed on the substrate;
- a layer of single crystal or essentially single crystal silicon material formed over the insulating layer;
- a flexible diaphragm formed in the silicon layer and supported over a cavity formed in the insulating layer;
- channels formed through the layer of silicon material adjacent a peripheral portion of the diaphragm and into the insulating layer adjacent to the cavity;
- a clamp formed in each channel, each clamp being attached to the diaphragm for supporting the diaphragm over the cavity and being formed of an electrical insulating material for electrically isolating the diaphragm from the substrate;
- and
- a circuit positioned in or on the diaphragm such that displacement of the diaphragm alters an electrical characteristic of the circuit.
5 more elements
Dependencies are inferred from the claim text.