Semiconductor device including nitride layer

A semiconductor device, comprising:

• a semiconductor substrate having a first conductor pattern formed thereon;
• a first insulator film provided on said semiconductor substrate and covering said first conductor pattern;
• a coat applied onto said first insulator film to flatten an uneven surface of said first insulator film, said coat comprising an organopolysiloxane polymer;
• a nitride layer having a thickness of 10.ANG. or more provided in a surface of said coat and including a binding of silicon and nitrogen;
• a second insulator film provided on said coat including said nitride layer;
• a via hole exposing a portion of a surface of said first conductor pattern through said first insulator film, said coat and said second insulator film;
• and
• a second conductor pattern having a portion thereof buried in said via hole and thereby connected to said first conductor pattern.

A semiconductor device, comprising:

• a semiconductor substrate having a first conductor pattern formed thereon;
• a first insulator film provided on said semiconductor substrate and covering said first conductor pattern;
• a coat applied onto said first insulator film to flatten an uneven surface of said first insulator film, said coat comprising polysilanol;
• a nitride layer having a thickness of 10.ANG. or more provided in a surface of said coat and including a binding of silicon and nitrogen;
• a second insulator film provided on said coat including said nitride layer;
• a via hole exposing a portion of surface of said first conductor pattern through said first insulator film, said coat and said second insulator film;
• and
• a second conductor pattern having a portion thereof buried in said via hole and thereby connected to said first conductor pattern.