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US 5,177,577 AGranted
Liquid crystal display device with TFT's each including a Ta gate electrode and an anodized Al oxide film
AssigneeHitachi, Ltd.
InventorsHideaki Taniguchi, Kazuo Shirahashi, Yuka Matsukawa, Haruo Matsumaru, Akira Sasano
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Abstract
An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode of an upper aluminum film and a lower tantalum film formed over a glass substrate and a gate insulator of an upper silicon nitride film and a lower anodized oxide film of the aluminum film.
Claims13
A thin-film transistor comprising:
- a substrate;
- a gate electrode including a first-level conducting film of tantalum formed on said substrate and a second-level conducting film of aluminum formed over said first-level layer;
- a gate insulating film formed on said second-level conducting film including a third-level insulating film formed of an oxidized film of said secondlevel conducting film;
- a semiconductor film formed over said gate insulating film;
- and
- a pair of source and drain electrodes formed apart from each other over said semiconductor film so that said gate electrode is laid across among said pair.
3 more elements
A liquid crystal display device comprising:
- a first substrate and a second substrate;
- a liquid crystal layer formed between said first and second substrates;
- a plurality of thin-film transistors formed between said first substrate and said liquid crystal layer each including a gate electrode, a semiconductor film, a gate insulating film formed between said semiconductor film and said gate electrode and source and drain electrodes formed apart form each other;
- a plurality of pixel electrodes each electrically connected with one of said source and drain electrodes of each of said thin-film transistors;
- a plurality of row conducting lines each electrically connected with each said gate electrode of associated thin-film transistors;
- a plurality of column conducting lines each electrically connected with the other one of said source and drain electrodes of said associated thin-film transistors;
- a first-level conducting film comprised of tantalum formed on said first substrate;
- a second-level conducting film comprised of aluminum formed over said first-level conducting film,
- wherein said first-level conducting film and said second-level conducting film together comprise said gate electrodes and said two conducting lines;
- and
- a third-level insulating film being of an oxidized film and formed on the upper surface of said second-level conducting film providing said gate insulating film and an intersection insulator between each of said row conducting lines and each of said column conducting lines at the intersection thereof.
8 more elements
Dependencies are inferred from the claim text.