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US 5,177,366 AGranted
Ion beam implanter for providing cross plane focusing
AssigneeEaton Corporation
InventorsMonroe L. King, Jerald P. Dykstra
Life of this patent
Estimating the term…
Abstract
An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam passes through electrodes positioned along a beam travel path that both redeflect the once-deflected ion beam and accelerate the ions to a desired final energy. Ions within the beam exit the accelerator and impact a workpiece at a uniform, controlled impact angle due to ion focusing in a scanning plane and an orthogonal cross plane.
Claims16
An ion beam implant system for controllably treating a workpiece comprising:
- a) source means for providing ions to treat a workpiece;
- b) support means for orienting the workpiece at a location relative the source means;
- c) beam forming means for causing ions emitted by the source means to follow an initial trajectory;
- d) electrode means fro deflecting ions in said ion beam away from said initial trajectory by a controlled amount;
- e) lens means for again deflecting ions prior to said ions impacting the workpiece comprising first and second spaced electrodes that define first and second elongated slots for allowing ions to enter a spatially non-uniform electric field that causes ions following diverse trajectories after deflection by the electrode means to be redeflected and impact the workpiece at a relatively uniform angle;
- and
- f) control means having an output coupled to said electrode means to adjust the deflecting of said ion beam and thereby control ion beam treatment of the workpiece;
- g) the first and second elongated slots varying in width from a center region of the first and second slots to an outer portion of said first and second slots.
5 more elements
For use with an ion beam implant system, an ion accelerator comprising:
- a) first and second entrance electrodes biased at voltages for creating a non-uniform electric field that causes ions following diverse trajectories within said implant system to be deflected and impact a workpiece at a relatively uniform angle;
- said electrodes defining elongated slots extending therethrough that are generally symmetric about a plane passing through said first and second entrance electrodes and wherein the slots have a width that varies across the length of the slots;
- b) a plurality of additional spaced electrodes for accelerating said ions to an impact energy before striking the workpiece;
- c) a plurality of insulators separating said electrodes;
- and
- d) a power supply for electrically biasing the first and second entrance electrodes at electric potentials different from the plurality of additional electrodes to create the non-uniform electric field and for electrically biasing the plurality of additional spaced electrodes for accelerating the ions.
3 more elements
An ion beam implant system for controllably treating a workpiece comprising:
- a) source means for providing ions to treat the workpiece;
- b) support means for orienting the workpiece at a location relative the source means;
- c) beam forming means for causing ions emitted by the source means to form an ion beam moving in a first trajectory;
- d) electrode means for deflecting ions in said ion beam away from said first trajectory by a controlled amount;
- e) acceleration means for accelerating ions deflected by said controlled amounts prior to said ions impacting the workpiece;
- and
- f) control means having an output coupled to said electrode means to adjust the deflecting of said ion beam and thereby control ion beam treatment of the workpiece;
- g) said accelerator means comprising:
- i) first and second arcuate entrance electrodes defining throughpassages symmetric about a centerline that are wider at locations spaced from the centerline than at the centerline for creating a non-uniform electric field that causes ions following diverse trajectories after passing the electrode means to be redeflected and impact the workpiece at a relatively uniform angle;
- ii) a plurality of additional, spaced, parallel electrode plates for accelerating said ions to an impact energy;
- iii) a plurality of insulators separating said plates;
- and,
- iv) power supply means for biasing said arcuate entrance electrode relative said plurality of parallel electrode plates wherein a first of the additional electrodes is maintained at a fixed voltage by a high voltage power supply, a second of the additional electrodes is grounded and the entrance electrode is biased by a lens power supply at a voltage higher than the first additional electrode wherein positively charged ions are accelerated to a controlled ion energy when striking the workpiece.
10 more elements
A method for ion beam implanting a workpiece comprising the steps of:
- a) causing a beam of ions to move along an initial trajectory;
- b) orienting the workpiece at a target location;
- c) causing ions to diverge away from the initial trajectory to scan in a back and forth manner to form a narrow ion beam having an extent at least as wide as the workpiece;
- d) redeflecting said ions by generating a static electric field that both redeflects and accelerates ions after the divergence of the beam in both a parallelizing plane and cross plane orthogonal to the parallelizing plane;
- and
- e) moving the workpiece in a back and forth manner to cause ions passing through the static electric field to treat an entire workpiece surface.
3 more elements
An ion beam implant system for controllably treating a workpiece comprising:
- a) source means for providing ions to treat the workpiece;
- b) support means for orienting the workpiece at a location relative the source means;
- c) beam forming means for causing ions emitted by the source means to form an ion beam moving in a first trajectory;
- d) electrode means for deflecting ions in said ion beam away from said first trajectory by a controlled amount;
- e) lens means for again deflecting ions prior to said ions impacting the workpiece comprising first and second spaced electrodes that define first and second elongated slots for allowing ions to enter a spatially non-uniform electric field that causes ions following diverse trajectories to be redeflected and impact the workpiece at a relatively uniform angle;
- and
- f) control means having an output coupled to said electrode means to adjust the deflecting of said ion beam and thereby control ion beam treatment of the workpiece;
- g) at least one of the first and second electrodes having a thickness that changes along the length of the elongated slots.
5 more elements
An ion beam implant system for controllably treating a workpiece comprising:
- a) source means for providing ions to treat the workpiece;
- b) support means for orienting the workpiece at a location relative the source means;
- c) beam forming means for causing ions emitted by the source means to form an ion beam moving in a first trajectory;
- d) electrode means for deflecting ions in said ion beam away from said first trajectory by a controlled amount;
- e) lens means for again deflecting ions prior to said ions impacting the workpiece comprising first and second spaced electrodes that define first and second elongated slots for allowing ions to enter a spatially non-uniform electric field that causes ions following diverse trajectories to be redeflected and impact the workpiece at a relatively uniform angle;
- and
- f) control means having an output coupled to said electrode means to adjust the deflecting of said ion beam and thereby control ion beam treatment of the workpiece;
- g) first and second electrodes having curved surfaces separated by a gap that changes along the length of the elongated slots.
5 more elements
Dependencies are inferred from the claim text.