Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements

Abstract

A device for measuring photoinduced electrical properties at a semiconductor sample surface. The device includes an analysis probe having a means for directing a light beam to a defined portion of a semiconductor substrate surface. A probe electrode is provided for detecting a photo-induced electrical signal from the defined portion of the semiconductor substrate, and a light blocking means is carried by the probe for substantially blocking stray light from the defined portion of the substrate surface. A positioning means for positioning the semiconductor and device with respect to each other for measurement of the photo-induced electrical property at a desired defined portion of the semiconductor substrate surface. The positioning means may be adapted to position respectively the wafer and probe without contact between the wafer and probe and to position the wafer with respect to a chuck without contacting the chuck.

Dependencies are inferred from the claim text.