Method for depositing material on depressions
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Takashi Inujima
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Abstract
An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.
Claims9
A method of forming a depression structure including:
- etching a semiconductor substrate by use of a mask in order to form a depression;
- forming a film on the inside surface of the depression by a CVD method using light irradiation;
- and
- removing the film formed on at least the bottom of said depression by anisotropic etching with said mask in order to leave at least some of the film formed on the side surface of said depression.
A method of forming a depression structure comprising the steps of:
- forming a depression in a semiconductor substrate;
- forming a mask for use in etching on at least some portion of the side surface of said depression so that said substrate is exposed at the bottom of said depression, wherein said mask forming step is carried out by a CVD method using light irradiation;
- and
- removing said mask after the etching.
A method of forming a depression structure comprising the steps of:
- etching a semiconductor substrate by use of a mask in order to form a depression therein;
- forming a film on the inside surface of said depression;
- removing the film formed on at least the bottom of said depression by anisotropic etching with said mask in order to leave at least some of the film formed on the side surface of said depression;
- anisotropically etching the bottom of said substrate in a direction substantially parallel with the surface of said substrate to form a cavity in said substrate;
- and
- removing said some of the film.
A method of forming a depression structure comprising the steps of:
- forming a depression in a semiconductor substrate;
- forming a mask for use in anisotropic etching on at least some portion of the side surface of the said depression so that said substrate is exposed at the bottom of said depression;
- and
- removing said mask after the anisotropic etching.
Dependencies are inferred from the claim text.