US 5,175,445 A · MOS type input circuit

Abstract

The source-drain paths of p-channel first and second MOSFETs are connected in series between a node, to which a high-potential power source voltage is supplied, and a signal output node. The source-drain paths of n-channel third and fourth MOSFETs are connected in series between the signal output node and a node to which a low-potential power source voltage is supplied. A signal from an input node is supplied to the gates of said four MOSFETs in a parallel manner. The source-drain path of an n-channel fifth MOSFET is connected in parallel to the source-drain path of the second MOSFET which is not directly connected to the node of the high-potential power source voltage. The gate of the fifth MOSFET is connected to the node of the high-potential power source voltage. The source-drain path of a p-channel sixth MOSFET is connected in parallel to the source-drain path of the third MOSFET which is not directly connected to the node of the low-potential power source voltage. The gate of the sixth MOSFET is connected to the node of the low-potential power source voltage.

Claims21

Dependent claims

A CMOS type input circuit comprising:

a first node for receiving a first power source voltage;
a second node for receiving a second power source voltage;
a third node for outputting a signal;
a first MOSFET of a first channel type having a gate and a source-drain path having a first end coupled to said first node, and a second end;
a second MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said first MOSFET, and a second end coupled to said third node;
a third MOSFET of a second channel type having a gate and a source-drain path having a first end coupled to said second node, and a second end;
a fourth MOSFET of the second channel type having a gate and a source-drain path having a first end coupled to the second end of said source-drain path of said third MOSFET, and a second end coupled to said third node;
and
a fifth MOSFET of the second channel type having a gate coupled to said first node, and a source-drain path coupled in parallel to said source-drain path of said second MOSFET.

6 more elements

A CMOS type input circuit comprising:

a first node for receiving a first power source voltage;
a second node for receiving a second power source voltage;
a third node for outputting a signal;
a first MOSFET of a first channel type having a gate and a source-drain path having a first end coupled to said first node, and a second end;
a second MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said first MOSFET, and a second end coupled to said third node;
a third MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;
a fourth MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said third MOSFET, and a second end coupled to said third node;
and
a fifth MOSFET of the second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said second MOSFET.
a sixth MOSFET of the first channel type, having a gate, and a source-drain path coupled in parallel to said source-drain path of said third MOSFET.
a seventh MOSFET of the second channel type having a gate, and a source-drain path coupled between said first end of said source-drain path of said third MOSFET and said second node;
an eighth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to said first node, and a second end;
a ninth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said eighth MOSFET, and a second end coupled to said third node;
a tenth MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;
an eleventh MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said tenth MOSFET, and a second end;
a twelfth MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said eleventh MOSFET, and a second end coupled to said third node;
a thirteenth MOSFET of the second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said ninth MOSFET;
and
a fourteenth MOSFET of the first channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said twelfth MOSFET.

16 more elements

A CMOS type input circuit comprising:

a first node for receiving a first power source voltage;
a second node for receiving a second power source voltage;
a third node for outputting a signal;
a first MOSFET of a first channel type having a gate and a source-drain path having a first end coupled to said first node, and a second end;
a second MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said first MOSFET ,and a second end coupled to said third node;
a third MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;
a fourth MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said third MOSFET, and a second end coupled to said third node;
a fifth MOSFET of a second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said second MOSFET;
a sixth MOSFET of a second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said third MOSFET;
a seventh MOSFET of the first channel type having a gate, and a source-drain path coupled between said first end of said source-drain path of said first MOSFET and said first node;
an eighth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to said first node, and a second end;
a ninth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said eighth MOSFET, and a second end;
a tenth MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said ninth MOSFET, and a second end coupled to said third node;
an eleventh MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;
a twelfth MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said eleventh MOSFET, and a second end coupled to said third node;
a thirteenth MOSFET of the second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said tenth MOSFET;
and
a fourteenth MOSFET of the first channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said twelfth MOSFET.

15 more elements

A CMOS type input circuit comprising:

a first node for receiving a first power source voltage;
a second node for receiving a second power source voltage;
a third node for outputting a signal;
a first MOSFET of a first channel type having a gate and a source-drain path having a first end coupled to said first node, and a second end;
a second MOSFET of the first channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said first MOSFET, and a second end coupled to said third node;
a third MOSFET of a second channel type having a gate, and a source-drain path having a first end coupled to said second node, and a second end;
a fourth MOSFET of the second channel type having a gate, and a source-drain path having a first end coupled to the second end of said source-drain path of said third MOSFET, and a second end coupled to said third node;
a fifth MOSFET of the second channel type having a gate, and a source-drain path coupled in parallel to said source-drain path of said second MOSFET.
a sixth MOSFET of the first channel type, having a gate, and a source-drain path coupled between the second end f said source-drain path of said first MOSFET and said second node;
and
a seventh MOSFET Of the second channel type having a gate, and a source-drain path coupled between the second end of said source-drain path of said fourth MOSFET and said first node.

8 more elements

Dependencies are inferred from the claim text.

MOS type input circuit

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MOS type input circuit

Life of this patent

Abstract

Claims21