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US 5,174,858 AGranted
Method of forming contact structure
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroshi Yamamoto, Kazuyuki Sawada
Life of this patent
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Abstract
A method of forming a contact structure comprising a first step whereby a contact hole is formed with an etching stopper film by way of self-alignment, a second step whereby the etching stopper film is removed from the contact hole, and a third step of metallization, whereby unnecessary intermediate film layers are removed from the connected regions.
Claims12
A method of forming a contact structure, comprising the steps of:
- (a) depositing successively, a first insulation film, a first conductive film, and a second insulation film on a surface of a substrate having fine recesses and projections on the surface;
- (b) forming a first resist pattern on said second insulation film, said resist pattern having an aperture;
- (c) removing a part of said second insulation film exposed to said aperture by applying a reactive ion etching process with use of the resist pattern so as to form a first contact hole through said second insulation film, whereby said first conductive film serves as an etching stopper;
- (d) removing a part of said first conductive film exposed to said aperture so as to form a second contact hole through said first conductive film;
- (e) removing a part of said first insulation film exposed to said aperture contact hole through said first insulation film;
- and
- (f) depositing a second conductive film in the contact hole, said contact hole comprising said first contact hole, and said second contact hole.
4 more elements
A method of forming a contact structure, comprising the steps of:
- (a) depositing successively, a first insulation film, a first conductive film, and a second insulation film on a surface of a substrate having fine recesses and projections on the surface;
- (b) forming a first resist pattern on said second insulation film, said first resist pattern having an aperture;
- (c) removing a part of said second insulation film exposed to said aperture by applying a reactive ion etching process with use of said first resist pattern so as to form a first contact hole through said second insulation film, whereby said first conductive film serves as an etching stopper;
- (d) removing a part of said first conductive film exposed to said aperture so as to form a second contact hole through said first conductive film;
- (e) depositing a spacer film on said second contact hole;
- (f) removing a part of said first insulation film and said spacer film exposed to said aperture so as to form a third contact hole through said first insulation film;
- and
- (g) depositing a second conductive film in the contact hole, said contact hole comprising said first contact hole, said second contact hole, and said third contact hole.
5 more elements
Dependencies are inferred from the claim text.