Crystal growth of group II-VI compound semiconductor
AssigneeStanley Electric Co., Ltd.
InventorsMichihiro Sano, Yasuo Okuno
Life of this patent
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Abstract
A ZnSe source crystal is treated in a Se vapor pressure peaks are obtained when the Se pressure is 6 to 9 atoms dissolved in a Zn solvent to the saturation concentration at a high temperature portion in the solution. A ZnSe single crystal is grown on an underlie substrate placed at a low temperature portion in the solution. When the temperature of the vapor pressure treatment is 1050.degree. C., excellent photoluminescence peaks are obtained when the Se pressure is 6 to 9 atoms.
Claims17
A method of growing a group II-VI compound semiconductor, comprising the steps of:
- forming an enriched source crystal that is enriched with the group VI constituent element by thermally treating a source crystal of the group II-VI compound semiconductor by heating said source crystal to a thermal treatment temperature and applying to said source crystal a vapor of a group VI constituent element of the group II-VI compound semiconductor;
- and
- dissolving said thermally treated and enriched source crystal in a solvent consisting essentially of Zn to produce a liquid phase, and growing a substrate crystal of the group II-VI compound semiconductor from said liquid phase at a liquid phase crystal growth temperature.
A method of growing a group II-VI compound semiconductor, comprising the steps of:
- forming an enriched source crystal that is enriched with said group VI constituent element by thermally treating a source crystal of the group II-VI compound semiconductor by placing in a closed vessel the source crystal at a portion of the closed vessel at a thermal treatment temperature and a group VI constituent element of the group II-VI compound semiconductor at a portion of the closed vessel at a temperature lower than the thermal treatment temperature to apply to said source crystal a vapor of the group VI constituent element;
- dissolving said thermally treated and enriched source crystal in a solvent comprising Zn to produce a liquid phase, and growing a substrate crystal of the group II-VI compound semiconductor from said liquid phase by placing the source crystal in the solvent comprising Zn and placing the substrate crystal 5 to 15 cm below the source crystal on a heat sink having a lower temperature than a liquid phase crystal growth temperature, said solvent in contact with said source crystal being at a higher temperature than said liquid phase crystal growth temperature.
Dependencies are inferred from the claim text.