Manufacture of quartz glass crucible for use in the manufacture of single crystal silicon
AssigneeShin-Etsu Quartz Products Co., Ltd.
InventorsMitsuo Matsumura, Hiroshi Matsui
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Abstract
A quartz glass crucible for use in a process for pulling a single crystal silicon and having an outer layer and an inner layer. The outer layer contains less than 0.3 ppm each of Na, K and Li and more thant 5 ppm of Al. The outer layer further contains bubbles to present an opaque appearance. The inner layer is made by melting powders of high purity non-crystalline synthetic silica and contains less then 200 ppm of OH group. There is also disclosed a method for producing the crucible.
Claims5
A method for producing a quartz glass crucible for use in a process for pulling a single crystal silicon, said method comprising the steps of:
- supplying powders containing natural crystalline quartz to form a powder layer of a crucible configuration,
- heating an inner surface of said powder layer having said crucible configuration so that the inner surface of said powder layer is molten so as to thereby form a crucible basic structure containing bubbles and having an inner surface,
- forming a high temperature atmosphere in said crucible basic structure during or after the step of forming the crucible basic structure, and
- supplying into the high temperature atmosphere powders of high purity non-crystalline synthetic silica containing less than 170 ppm of OH group so that at least a part of said powders of synthetic silica are molten and are deposited on said inner surface of the crucible basic structure so as to form said inner surface of the crucible basic structure with a transparent synthetic silica glass layer of a predetermined thickness.
Dependencies are inferred from the claim text.