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US 5,173,762 AGranted
Semiconductor device using bonding wires of different materials
AssigneeKabushiki Kaisha Toshiba
InventorMasaki Ota
Life of this patent
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Abstract
Disclosed is a semiconductor device comprising a semiconductor integrated chip having at least a power processing circuit in which a larger current flows and a signal processing circuit in which a smaller current flows, each circuit having bonding pads, a package having leadframes, on which the semiconductor integrated chip is mounted, and a plurality of bonding wires with different materials through which the bonding pads are joined to the leadframes.
Claims8
A semiconductor device comprising:
- a semiconductor integrated chip having at least a power processing circuit and a signal processing circuit, each circuit having bonding pads;
- a package having leadframes on which the semiconductor integrated chip is mounted;
- and
- a plurality of bonding wires with different materials through which the bonding pads are joined to the leadframes,
- wherein
- the bonding wires used for the power processing portion each consist of a metal wire of a first metal through which the bonding pad in the power processing portion is joined to the leadframe, and the bonding wires used for the signal processing portion each consist of a metal wire of a different metal from said first metal through which the bonding pad in the signal processing portion is joined to the leadframe.
3 more elements
Dependencies are inferred from the claim text.