Laser ablation deposition process for semiconductor manufacture

A laser ablation deposition process for semiconductor manufacture comprising:

• depositing a first metal layer and a second metal layer on a source substrate with an additional step of breaking vacuum between the deposition of the second metal layer and the deposition of the first metal layer, having a selected thermal conductivity and a laser ablation deposition threshold;
• mounting the source substrate in a vacuum chamber;
• heating the source substrate with a heating element to a desired temperature range;
• mounting an optically transparent target substrate in close proximity to the source substrate with the target substrate and source substrate separated by a gap;
• scanning the first metal layer on the source substrate by a laser beam, of a selected energy and pulse duration passed through the target substrate to the first metal layer with a controlled fluence for transmitting a threshold laser fluence in order to ablate the first metal layer, transport metal across the gap and deposit the first metal layer onto the target substrate in a controlled manner;
• and
• scanning the second metal layer on the source substrate by a laser beam of a selected energy and pulse duration passed through the target substrate to the second metal layer with a controlled fluence for transmitting a threshold laser fluence in order to ablate and deposit the second metal layer on the first metal layer deposited on the target substrate in a layer by layer manner.

A laser ablation deposition process for semiconductor manufacture comprising:

• initially depositing multiple layers of metal on a source substrate, of a selected thermal conductivity with an additional step of breaking vacuum between each successive metal layer deposition;
• mounting the source substrate in a vacuum chamber at a pressure of 1.times.10.sup.(-3) to 1.times.10.sup.(-8) Torr;
• mounting an optically transparent substrate in close proximity to but spaced from the source substrate;
• scanning a first metal layer by an excimer laser focused though a lens, through the target substrate and to the first metal layer, with the laser energy and thermal conductivity of the source substrate selected to transmit a threshold laser fluence to the first metal layer in order to ablate metal from the source substrate and transport the metal through the gap onto the target substrate and deposit the first metal layer onto the target substrate;
• and
• heating the source substrate with a heating element mounted adjacent to the source substrate to a desired temperature range in order to further control ablation and deposition of the metal layers.