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US 5,170,229 AGranted
Junction field effect transistors with injector region
AssigneeLink Analytical Limited
InventorTawfic S. Nashashibi
Life of this patent
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Abstract
An Injector Junction Field Effect Transistor (IJFET) is disclosed which, in addition to having two gates (G1, G2) a drain (D) and a source (S), also has an injector (I). The device may be used as a high impedance charge or current amplifier in, for example, an x-ray fluorescence device. On applying current to the injector carriers are introduced into the channel of the device allowing a small gate leakage current to flow to restore charge to the input. A small restore current is therefore controllable by low impedance injector circuits.
Claims14
A device including a JFET comprising:
- a substrate of a first conductivity type, an epitaxial layer which is at one surface of the substrate and is of opposite conductivity type, and a source region, a first gate region and a drain region formed at spaced-apart locations in said epitaxial layer;
- and
- an injector region formed at said epitaxial layer at a location intermediate said gate and one of said source and drain regions;
- wherein current flows through said first gate region thereby removing accumulated charge via said gate region when a pulse of a selected polarity is applied to the injector region.
1 more element
A device including a JFET comprising:
- a substrate of a first conductivity type, an epitaxial layer which is at one surface of the substrate and is of opposite conductivity type, and a source region, a first gate region and a drain region formed at spaced-apart locations in said epitaxial layer;
- and
- an injector region formed at said epitaxial layer at a location intermediate said gate and one of said source and drain regions;
- wherein current flows through said first gate region thereby removing accumulated charge via said gate region when a voltage of a selected polarity is applied to the injector region.
1 more element
Dependencies are inferred from the claim text.