High-frequency oscillator having a field-effect transistor with a stepwise increasing active layer carrier concentration
AssigneeSumitomo Electric Industries, Ltd.
InventorNobuo Shiga
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Abstract
This invention is a high-frequency oscillator including a MESFET, wherein a GaAs MESFET, in which the doping profile of an active layer has a pulse-doped structure, is used as the MESFET. Since the GaAs MESFET is formed to have the pulse-doped structure, the change in transconductance with respect to the change in gate resistance remains constant at gate voltages within a predetermined range. When the gate voltage is set to be a voltage within this predetermined range, a capacitance change with respect to a gate voltage across a gate and a source is reduced. FM noise proportional to the magnitude of this capacitance change is reduced. Accurate information transmission is not interfered with unlike in conventional arrangements.
Claims5
A high-frequency oscillator comprising:
- a Schottky barrier field-effect transistor, and
- a resonator having an output connected to said field-effect transistor, said field-effect transistor being formed of a GaAs semiconductor, and a carrier concentration of an active layer of said field-effect transistor increasing stepwise at a predetermined depth.
A method of reducing FM noise in a high-frequency oscillator which comprises a Schottky barrier field-effect transistor, and a resonator which has an output connected to said field-effect transistor, said field-effect transistor being formed of a GaAs semiconductor, and a carrier concentration of an active layer of said field-effect transistor increasing stepwise at a predetermined depth,
- said method comprising the step of setting the gate voltage of said field-effect transistor within a range in which a change in transconductance with respect to a change in the gate voltage remains constant.
Dependencies are inferred from the claim text.