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US 5,164,246 AGranted
Highly thermoconductive ceramic
AssigneeKabushiki Kaisha Toshiba
InventorsShunichiro Tanaka, Akio Sayano, Yasuyuki Sugiura, Hiroyuki Ishizuka
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AssigneeKabushiki Kaisha Toshiba
InventorsShunichiro Tanaka, Akio Sayano, Yasuyuki Sugiura, Hiroyuki Ishizuka
Estimating the term…
A highly thermoconductive ceramic substrate, which is characterized by having formed on a ceramic substrate an electroconductive coating of a mixture of tungsten and/or molybdenum with the nitride of a transition metal belonging to Group IVa of the Periodic Table of Elements. As the ceramic substrate in the present invention, a non-oxide type ceramic substrate is used because of satisfactory strength. The formation of the electroconductive coating consisted preponderantly of a mixture of tungsten and/or molybdenum with the nitride of a metal belonging to Group IVa of the Periodic Table Elements is accomplished, for example, by preparing a metallizing composition in the form of a paste or solution containing a metal salt of tungstic acid or molybdic acid and a transition metal of Group IVa or a compound thereof, applying the metallizing composition on the ceramic substrate, heating the resulting composite, then firing the composite.
A highly thermoconductive ceramic substrate for use in the manufacture of a semiconductor, said highly thermoconductive ceramic substrate comprising a ceramic substrate consisting essentially of aluminum nitride as a main component and an electroconductive coating directly formed on said ceramic substrate, said electroconductive coating consisting essentially of a sintered ceramic including at least one nitride-forming element selected from the Group IVa of the IUPAC Periodic Table and at least one element selected from the group consisting of tungsten and molybdenum, and said electroconductive coating having a substantially uniform thickness.
A highly thermoconductive ceramic substrate for use in the manufacture of a semiconductor, said highly thermoconductive ceramic substrate comprising a ceramic substrate consisting essentially of aluminum nitride as the main component and an electroconductive coating formed directly on said ceramic substrate, said electroconductive coating consisting essentially of a sintered ceramic including at least one nitride-forming element selected from the Group IVa of the IUPAC Periodic Table and at least one element selected from the group consisting of tungsten and molybdenum, said electroconductive coating having a substantially uniform thickness, said highly thermoconductive ceramic substrate being produced by a method comprising applying a metallizing composition onto a surface of said ceramic substrate, said metallizing composition comprising at least one metal salt selected from the group consisting of tungstic acid and molybdic acid, at least one metal compound selected from the group consisting of oxide, boride, carbide and organic compound of a metal selected from Group IVa of the IUPAC Periodic Table and a binder, drying said metallizing composition, heating said metallizing composition to fuse said at least one metal salt and firing said metallizing composition in a nonoxidizing atmosphere to react said sintered ceramic with said at least one metal compound to result in said electroconductive coating.
A highly thermoconductive ceramic substrate according to claim 9 or claim 3, which further comprises a metal coating deposited on said electroconductive coating.
Dependencies are inferred from the claim text.