US 5,162,933 AGranted

Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium

AssigneesNippon Telegraph and Telephone Corporation, Hosiden Corporation

InventorsNobuhiko Kakuda, Tsutomu Wada, Kinya Kato, Tadamichi Kawada, Masamichi Okamura, Shigeo Aoki, Yasuhiro Ukai, Kiyoshi Taruta, Tomihisa Sunata, Hiroshi Saito, Takanobu Nakagawa

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Abstract

In an active matrix structure for liquid crystal display elements which includes pixel electrodes arranged in a matrix form on a glass base plate, thin film transistors having their drains connected to the pixel electrodes, respectively, data lines each connected to sources of the thin film transistors of one column and gate lines connected to gates of the thin film transistors of one row, there are provided in the same plane a light blocking layer disposed opposite each of the thin film transistors across an insulating layer, a storage capacitance electrode disposed partly opposite each of the pixel electrodes across the insulating layer and storage capacitance lines for interconnecting the capacitance electrodes. The light blocking layers, the storage capacitance electrodes and the storage capacitance lines are formed of the same material and at the same time.

Claims20

Dependent claims

An active matrix structure for a liquid crystal display element, comprising:

a transparent base plate;
an insulating layer formed almost all over said transparent base plate;
transparent pixel electrodes arranged in matrix form on said insulating layer;
thin film transistors arranged in matrix form and having semiconductor layers formed on said insulating layer and drains connected to said transparent pixel electrodes, respectively;
a plurality of data lines connected respectively to sources of said thin film transistors in corresponding columns of the matrix;
a plurality of storage capacitance electrodes formed between said insulating layer and said transparent base plate to at least partly overlap corresponding ones of said transparent pixel electrodes via said insulating layer;
a plurality of light blocking layers formed between said transparent base plate and said insulating layer in opposing relation to the semiconductor layers of corresponding ones of said thin film transistors, for preventing the incidence of light on said semiconductor layers;
and
a plurality of storage capacitance connection lines formed between said transparent base plate and said insulating layer for interconnecting said storage capacitance electrodes;
each of said storage capacitance electrodes, capacitance connecting liens and light blocking layers being formed by conductive material layers of the same structure.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 07/697,991Filed 10 May 1991
Priority: JP 2-12407516 May 1990
Granted: 10 Nov 1992
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 86/80
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
G02F 1/136213
Active matrix addressed cells: storage capacitors associated with the pixel electrode
G02F 1/136286
Active matrix addressed cells: wiring, e.g. gate line, drain line
G02F 1/1345
Constructional arrangements; Manufacturing methods: conductors connecting electrodes to cell terminals