Edge-heat sink technqiue for zone melting recrystallization of semiconductor-on-insulator films
AssigneeMassachusetts Institute of Technology
InventorChenson K. Chen
Life of this patent
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Abstract
Wafers of silicon-on-insulator (SOI) produced by the zone melting recrystallization technique are known to exhibit warping and edge defects which prohibit their use in automated silicon wafer processing equipment. These deficiencies arise from excess heat buildup at the periphery of the wafer because the wafer edge acts as a barrier to heat transfer. Dissipation of heat from the edge by varying the heat dissipation efficiency of the environment about the periphery of the wafer allows wafers with substantially fewer defects to be produced.
Claims8
A method for adjusting the efficiency of heat dissipation from an SOI wafer during ZMR comprising
- supporting the wafer at its periphery while exposing central portions of the wafer by contacting said periphery with a solid thermally conductive substantially annular heat sink member providing a heat flow path away from said periphery, and
- controlling the pressure of the ambient gas during ZMR to effect differential heat dissipating efficiency between the central portions and periphery of said wafer.
A method for adjusting the efficiency of heat dissipation from an SOI wafer during ZMR comprising:
- flowing a gas stream substantially perpendicular to the plane of the wafer and about substantially the entire periphery of said wafer to dissipate heat from the wafer periphery to effect differential heat dissipation efficiency between the central portions and periphery of said wafer, and
- simultaneously subjecting the wafer to ZMR.
Dependencies are inferred from the claim text.