Thin high temperature heater
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsNoriko Morita, Susumu Hoshinouchi, Yoshihiko Kusakabe, Minoru Kobayashi
Life of this patent
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Abstract
A thin high temperature heater includes an adhesive layer of Ti disposed an insulating substrate and a resistor layer of a Ti compound disposed the adhesive layer.
Claims18
A thin high temperature heater comprising:
- an electrically insulating substrate;
- an adhesive layer selected from the group consisting of V, Cr, Y, La, Zr, Nb, and Hf disposed on said substrate;
- and
- a resistor layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereof disposed on said adhesive layer.
A method for manufacturing a thin high temperature heater comprising successively forming an adhesive layer selected from the group consisting of V, Cr, Y, La, Zr, Nb, and Hf and a resistor layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereof and disposed on the adhesive layer.
A method for manufacturing a thin high temperature heater comprising successively forming an adhesive layer selected from the group consisting of V, Cr, Y, La, Zr, Nb, and Hf and a resistor layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereof and disposed on the adhesive layer.
A thin high temperature heater comprising:
- an electrically insulating substrate;
- an adhesive layer selected from the group consisting of Ti, V, Cr, Y, La, Zr, Nb, and Hf disposed on said substrate;
- an adhesive relaxation layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereof and disposed on said adhesive layer;
- and
- a heating element comprising a metal disposed on said adhesive relaxation layer.
A method for manufacturing a thin high temperature heater comprising successively forming an adhesive layer selected from the group consisting of Ti, V, Cr, Y, La, Zr, Nb, and Hf and an adhesive relaxation layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereof and disposed on the adhesive layer at a temperature below the transformation temperature of the .alpha. to .beta. phase transformation of Ti.
A method for manufacturing a thin high temperature heater comprising successively forming an adhesive layer selected from the group consisting of Ti, V, Cr, Y, La, Zr, Nb, and Hf and an adhesive relaxation layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereof and disposed on the adhesive layer at a temperature at least equal to the transformation temperature of the .alpha. to .beta. phase transformation of Ti.
A thin high temperature heater comprising:
- an electrically insulating substrate;
- a Ti adhesive layer disposed on said substrate;
- and
- a resistor layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereof disposed on said adhesive layer.
A method for manufacturing a thin high temperature heater comprising successively forming a Ti adhesive layer and a resistor layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereto and disposed on the adhesive layer at a temperature below the transformation temperature of the .alpha. to .beta. phase transformation of Ti.
A method for manufacturing a thin high temperature heater comprising successively forming a Ti adhesive layer and a resistor layer selected from the group consisting of TiC, TiN, TiCN, and mixtures thereof and disposed on the adhesive layer at a temperature at least equal to the transformation temperature of the .alpha. to .beta.0 phase transformation of Ti.
Dependencies are inferred from the claim text.