X-ray reduction projection exposure system of reflection type

An X-ray exposure apparatus, comprising:

• a mask stage for holding a mask having a pattern for circuit manufacturing;
• a wafer stage for holding a wafer to be exposed to the pattern of the mask with X-rays;
• and
• a reflection reduction imaging system disposed between said mask stage and said wafer stage including a reflecting mirror arrangement containing at least one flat mirror and a plurality of non-flat mirrors, each of which mirrors are coated with multi-layer films, for receiving X-rays from the mask and directing them to the wafer to expose the wafer to a reduced image of the mask pattern with the X-rays.

An X-ray exposure apparatus, comprising:

• a mask stage for holding a mask having a pattern for circuit manufacturing;
• a wafer stage for holding a wafer to be exposed to the pattern of the mask with X-rays;
• and
• a reflection reduction imaging system disposed between said mask stage and said wafer stage including a reflecting mirror arrangement containing plural multi-layer film coated reflecting mirrors, at least one of which is provided with forced cooling means, for receiving X-rays from the mask and directing them to the wafer to expose the wafer to a reduced image of the mask pattern with the X-rays.

An X-ray exposure apparatus, comprising:

• a mask stage for holding a mask having a pattern for circuit manufacturing;
• a wafer stage for holding a wafer to be exposed to the pattern of the mask with X-rays;
• a reflection reduction imaging system disposed between said mask stage and said wafer stage including a reflecting mirror arrangement containing a plurality of reflecting mirrors coated with multi-layer films for receiving X-rays from the mask and directing them to the wafer to expose the wafer to a reduced image of the mask pattern with the X-rays;
• and
• wherein helium gas flows through a space between at least two of said reflecting mirrors.

An X-ray exposure apparatus, comprising:

• a mask stage for holding a mask having a pattern for circuit manufacturing;
• a wafer stage for holding a wafer to be exposed to the pattern of the mask with X-rays;
• means for forcingly cooling the mask;
• and
• a reflection reduction imaging system disposed between said mask stage and said wafer stage including a reflecting mirror arrangement containing a plurality of reflecting mirrors coated with multi-layer films for receiving X-rays from the mask and directing them to the wafer to expose the wafer to a reduced image of the mask pattern with the X-rays.

An X-ray reduction exposure apparatus, comprising:

• a mask stage for holding a mask having a pattern for circuit manufacturing;
• a wafer stage for holding a wafer to be exposed to the pattern of the mask;
• a reflection reduction imaging system disposed between said mask stage and said wafer stage including a reflecting mirror arrangement containing a plurality of reflecting mirrors which are coated with multi-layer films, at least one of the plurality of reflecting mirrors having an aspherical reflecting surface, said reflection reduction imaging system for exposing the wafer to a reduced image of the mask pattern in a rectangular area;
• and
• means for stepwisely moving said wafer stage to sequentially expose areas on the wafer having a configuration corresponding to the rectangular area.

An X-ray reduction exposure apparatus, comprising:

• a mask stage for holding a mask having a pattern for circuit manufacturing;
• a wafer stage for holding a wafer to be exposed to the pattern of the mask with X-rays;
• plural reflecting mirrors for reflecting X-rays, disposed between said mask stage and said wafer stage, to expose the wafer to a reduced image of the mask pattern;
• and
• means for detecting a mark on said wafer stage in an enlarged scale using visible light coming from the wafer by way of said reflecting mirrors in a direction opposite to a direction of travel of the X-rays for exposing the wafer, whereby the mark can be detected substantially free from aberration.

A reduction exposure apparatus, comprising:

• a mask stage for vertically holding a mask having a pattern for circuit manufacturing;
• a synchrotron orbital radiation source for producing energy rays for application of the rays to the mask;
• a wafer stage for horizontally holding a wafer to be exposed to the pattern of the mask with the rays;
• and
• reduction imaging means disposed between the mask and the wafer for exposing the wafer to a reduced image of the mask pattern, said imaging means comprising a plurality of reflecting mirrors, at least one of the reflecting mirrors having an aspherical reflecting surface and at least one of the reflecting mirrors being coated with a multi-layer film;
• and
• means for sequentially moving said wafer stage for sequentially exposing plural exposure areas of the wafer to the reduced image of the mask pattern.

An X-ray reflecting imaging system, comprising:

• a first mirror having a concave reflecting surface for reflecting X-rays from an object;
• a second mirror having a convex reflecting surface for receiving the X-rays from said first mirror and reflecting them;
• a third mirror having a concave reflecting surface for receiving the X-rays from said second convex mirror and reflecting them to form an image of the object;
• and
• wherein the reflecting surface of at least one of said first and third concave mirrors is aspherical, whereby an image formed by the X-rays involves minimized aberrations;
• and wherein the reflecting surface of at least one of said mirrors is provided with a multi-layer coating.

An X-ray projection exposure apparatus for exposing a member sensitive to X-rays to a reduced image of a mask pattern with the X-rays, said apparatus comprising:

• an inlet port for receiving X-rays travelling substantially in a horizontal direction;
• a mask holder for holding a mask substantially vertically for the mask to receive the X-rays through said inlet port;
• a first mirror for receiving the X-rays coming from the mask and reflecting them in a substantially vertical direction;
• a second mirror disposed above said first mirror having a bottom curved reflecting surface for receiving the X-rays from the first mirror and reflecting them;
• a third mirror disposed below said first mirror having a top curved reflecting surface for receiving the X-rays coming from said second mirror and reflecting them;
• a fourth mirror disposed between said first and second mirrors having a bottom curved reflecting surface for receiving the X-rays from said third mirror and reflecting them substantially vertically;
• and
• a holder for holding the sensitive member substantially horizontally for the sensitive member to receive the X-rays from the fourth mirror.

An X-ray exposure apparatus, comprising:

• a mask stage for holding a mask having a pattern for circuit manufacturing;
• a wafer stage for holding a wafer to be exposed to the pattern of the mask with X-rays;
• and
• a reflection reduction imaging system disposed between said mask stage and said wafer stage comprising reflecting mirrors coated with multi-layer films for receiving X-rays from the mask and directing them to the wafer to expose the wafer to a reduced image of the mask pattern with the X-rays;
• wherein at least one of the reflecting mirrors is provided with an aspherical reflecting surface.

An X-ray exposure apparatus comprising:

• an original supporting stage for supporting an original;
• a substrate supporting stage for supporting a substrate;
• and
• a mirror assembly for projecting an image of a pattern of the original onto the substrate using X-rays, said mirror assembly comprising at least three mirrors each having curved reflecting surfaces and at least one of which has an aspherical reflection surface.

A pattern transfer apparatus comprising:

• an original holder for holding an original having a pattern;
• a substrate holder for holding a substrate having plural areas;
• a projection system for projecting the pattern of the original onto an area of the substrate in a reduced scale, said projection system comprising a plurality of reflecting mirrors, wherein at least one of said mirrors has an aspherical reflection surface;
• and
• means for moving said substrate holder to sequentially transfer the pattern onto the areas of the substrate.

A pattern transfer apparatus comprising:

• an original holder for holding an original having a pattern;
• a substrate holder for holding a substrate having plural areas;
• a projection system for projecting the pattern of the original onto an area of the substrate, said projection system comprising a plurality of reflecting mirrors, wherein at least one of said mirrors has an aspherical reflection surface;
• and
• means for moving said substrate holder to sequentially transfer the pattern onto the areas of the substrate.

A pattern transfer apparatus comprising:

• an original holder for holding an original having a pattern;
• substrate holder for holding a substrate having plural areas;
• a projection system for projecting the pattern of the original onto an area of the substrate in a reduced scale, said projection system comprising at least three curved reflection surface mirrors, wherein at least one of said mirrors has an aspherical reflection surface;
• and
• means for moving said substrate holder to sequentially transfer the pattern onto the areas of the substrate.

A semiconductor manufacturing method comprising:

• holding an original having a pattern;
• holding a substrate having plural areas with a substrate holder;
• projecting the pattern of the original onto an area of the substrate in a reduced scale using a projection system having a plurality of reflecting mirrors, wherein at least one of the mirrors has an aspherical reflection surface;
• and
• moving the substrate holder to sequentially transfer the pattern onto the areas of the substrate.

A semiconductor manufacturing method comprising:

• holding an original having a pattern;
• holding a substrate having plural areas with a substrate holder;
• projecting the pattern of the original onto an area of the substrate using a projection system having a plurality of reflecting mirrors, wherein at least one of the mirrors has an aspherical reflection surface;
• and
• moving the substrate holder to sequentially transfer the pattern onto the areas of the substrate.

A semiconductor manufacturing method comprising:

• holding an original having a pattern;
• holding a substrate having plural areas with a substrate holder;
• projecting the pattern of the original onto an area of the substrate in a reduced scale using a projection system having at least three reflection surface mirrors, wherein at least one of the mirrors has an aspherical reflection surface;
• and
• moving the substrate holder to sequentially transfer the pattern onto the areas of the substrate.