Array and method of operating a modulated solid state laser array with reduced thermal crosstalk

A method of operating an array of monolithically formed independently addressable semiconductor lasers of the type including a plurality of semiconductor layers on a semiconductor substrate, at least one of said layers comprising an active layer divided into a plurality of regions including at least a light amplifying region and a modulator region, comprising the steps of:

• applying a sufficient forward bias to the amplifier region such that stimulated emission is caused to occur therein;
• directing a portion of said stimulated emission into said modulator region;
• and
• varying the internal loss of the modulator region by selectively connecting and disconnecting the modulator region to ground potential such that when the modulator region is disconnected from ground potential stimulated emission is allowed to cause lasing within the laser, and when the modulator region is connected to ground potential the stimulated emission is prevented from causing lasing within the laser.

A method of operating an array of monolithically formed independently addressable semiconductor lasers of the type including a plurality of semiconductor layers on a semiconductor substrate, at least one of said layers comprising an active layer divided into a plurality of regions including at least a light amplifying region and a modulator region, each region having associated with it at least one junction between p-type material and n-type material, comprising the steps of:

• applying a sufficient forward bias to the amplifier region such that stimulated emission is caused to occur therein;
• directing a portion of said stimulated emission into said modulator region;
• and
• varying the internal loss of the modulator region by selectively electrically connecting and disconnecting the p-type material and the n-type material of the modulator region such that when the p-type material and the n-type material are electrically disconnected stimulated emission is allowed to cause lasing within the laser, and when the p-type material and the n-type material are electrically connected the stimulated emission is prevented from causing lasing within the laser.

An array of monolithically formed independently addressable semiconductor lasers, comprising:

• a semiconductor substrate;
• a plurality of semiconductor layers formed on said substrate such that at least one of said layers forms an active layer of narrower bandgap than layers adjacent thereto;
• a first active region formed in said active layer for each laser, including at least one junction between p-type and n-type material, and further including a two dimensional optical cavity for functioning as a laser;
• a second active region formed in said active layer of at least one of the lasers of the array, including at least one junction between p-type and n-type material, and further including a two dimensional optical cavity coaxial with said optical cavity of said first active region for functioning as an optical modulator;
• wherein a sufficient forward bias is applied to said first active region of at least one of the lasers of the array such that stimulated emission is caused to occur therein, a portion of said stimulated emission being directed into said second active region of said at least one laser, and the internal loss of the second active region of said at least one laser is varied by selectively electrically connecting and disconnecting the p-type material and the n-type material of said second active region such that when said p-type material and n-type material are electrically disconnected stimulated emission is allowed to cause lasing within said at least one laser, and when said p-type and n-type material are electrically connected the stimulated emission is prevented from causing lasing within said at least one laser.

An array of monolithically formed independently addressable semiconductor lasers, comprising:

• a semiconductor substrate;
• a plurality of semiconductor layers formed on said substrate such that at least one of said layers forms an active layer of narrower bandgap than layers adjacent thereto;
• a first active region formed in said active layer for each laser, including a two dimensional optical cavity for functioning as a laser;
• a second active region formed in said active layer of at least one of the lasers of the array, including a two dimensional optical cavity coaxial with said optical cavity of said first active region for functioning as an optical modulator;
• wherein a sufficient forward bias is applied to said first active region of at least one of the lasers of the array such that stimulated emission is caused to occur therein, a portion of said stimulated emission being directed into said second active region of said at least one laser, and the internal loss of the second active region of said at least one laser is varied by selectively connecting and disconnecting said second active region to ground potential such that when said second active region is disconnected from ground potential stimulated emission is allowed to cause lasing within said at least one laser, and when said second active region is connected to ground potential the stimulated emission is prevented from causing lasing within said at least one laser.

A light emitting device, comprising:

• an array of monolithically formed independently addressable semiconductor lasers, comprising:
• a semiconductor substrate;
• a plurality of semiconductor layers formed on said substrate such that at least one of said layers forms an active layer of narrower bandgap than layers adjacent thereto;
• a first active region formed in said active layer for each laser, including a two dimensional optical cavity for functioning as a laser;
• a second active region formed in said active layer of at least one of the lasers of the array, including a two dimensional optical cavity coaxial with said optical cavity of said first active region for functioning as an optical modulator;
• means electrically connected to said second active region for selectively applying a bias across said second active region;
• wherein a sufficient forward bias is applied to said first active region of at least one of the lasers of the array such that stimulated emission is caused to occur therein, a portion of said stimulated emission being directed into said second active region of said at least one laser, and the internal loss of the second active region of said at least one laser is varied by selectively applying the voltage to said second active region such that when said voltage is applied to said second active region the stimulated emission is prevented from causing lasing within said at least one laser, and when said voltage is not applied to said second active region the stimulated emission is allowed to cause lasing within said at least one laser.