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AssigneeHitachi, Ltd.
InventorsHideaki Yamamoto, Koichi Seki, Toshihiro Tanaka, Akira Sasano, Toshihisa Tsukada, Yasuharu Shimomoto, Toshio Nakano, Hideto Kanamori
Estimating the term…
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.
A method of manufacturing a semiconductor device comprising the steps of forming a hydrogenated amorphous silicon (a-Si:H) layer over a given substrate;
A method of manufacturing a semiconductor device according to claim 10, wherein at least a portion of said metallic film in contact with said hydrogenated amorphous silicon layer is formed from at least one metal selected from the group consisting of Cr, Mo, W, Ti, V, Zr, Nb, Ta, Hf, Ni, Pd, Co, Pt and Rh.
A method of manufacturing a semiconductor device comprising the steps of forming a hydrogenated amorphous silicon (a-si:H) layer over a given substrate;
Dependencies are inferred from the claim text.