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US 5,144,409 AGranted
Isotopically enriched semiconductor devices
AssigneeYale University
InventorTso-Ping Ma
Life of this patent
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Abstract
A semiconductor structure including a single-crystal region composed of an isotopically enriched semiconductor material, and a semiconductor device formed in the isotopically enriched semiconductor region.
Claims25
A semiconductor structure comprising:
- a single-crystal region composed of an isotopically enriched silicon having a higher proportion of the .sup.28 Si isotope than is present in naturally occurring silicon;
- and
- a semiconductor device formed within said isotopically enriched single-crystal region.
A semiconductor structure comprising a single-crystal GaAs region wherein the gallium in said GaAs region is composed of at least 94% of one of the isotopes of Ga.
A semiconductor structure comprising:
- a single-crystal region composed of an isotopically enriched germanium;
- and
- a semiconductor device formed by using said isotopically enriched region.
A semiconductor structure comprising:
- a single-crystal region composed of an isotopically enriched GaAS;
- and
- a semiconductor device formed by using said isotopically enriched region. PG,29
Dependencies are inferred from the claim text.