Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit
AssigneeThe Charles Stark Draper Laboratories, Inc.
InventorRichard P. Tumminelli
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Abstract
A method of fabricating rare earth doped planar optical waveguides for integrated optical circuits includes introducing a first carrier gas to a heated column of rare earth chelate to create a flow of rare earth chelate vapor in the carrier; introducing a second carrier gas through a silicon precursor to create a flow of silicon precursor vapor in the carrier; submitting the flow of rare earth chelate vapor and the flow of silicon precursor vapor with oxygen and a homogenizing agent to a flame hydrolysis deposition burner to produce a soot of rare earth doped silica; and depositing the soot on a planar substrate; and etching the soot, after consolidation, to define one or more discrete channel waveguides.
Claims28
A method of fabricating rare earth doped planar optical waveguides for integrated optical circuits comprising:
- introducing a first carrier gas through a heated column of rare earth chelate to create a flow including rare earth chelate vapor and the first carrier;
- introducing a second carrier gas through a silicon precursor to create a flow including silica precursor vapor and the second carrier;
- introducing a flow of gas including a precursor of a glass homogenizing agent to one of said flow including silicon precursor vapor and said flow including rare earth chelate vapor;
- submitting (1) the flow including the rare earth chelate vapor, (2) the flow including the silica precursor vapor and (3) oxygen gas to a flame hydrolysis deposition burner to produce a soot of rare earth doped silica;
- depositing said soot on a planar substrate;
- heating said soot deposited on said substrate to consolidate said soot;
- and
- etching said consolidate soot to define one or more discrete channel waveguides.
A method of fabricating rare earth doped planar optical waveguides for integrated optical circuits comprising:
- introducing a first carrier gas through a heated column of rare earth chelate to create a flow including rare earth chelate vapor and the first carrier wherein the rare earth is from the group of cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium, and the chelate is one member selected from the group consisting of:
- 2,2,6,6-tetramethyl-3,5-heptanedione (thd);
- 1,1,1 trifluoro-2,4-pentanedione (tfa)
- 1,1,1,5,5,5-hexofluoro-2,4-pentamedione (hfa)
- 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octandione (fod)
- 2,2,7-trimethyl-3,5-ortanedione (tod)
- 1,1,1,5,5,6,6,7,7,7-decafluoro-2,4-heptanedione (dfhd)
- 1,1,1-trifluoro-6-methyl-2,4-heptanedione (tfmhd);
- introducing a second carrier gas through a silicon precursor to create a flow including silicon precursor vapor and the second carrier;
- submitting the flow including rare earth chelate vapor, the flow including silicon precursor vapor and oxygen gas to a flame hydrolysis deposition burner to produce a soot of rare earth doped silica;
- and
- depositing said soot on a planar substrate.
Dependencies are inferred from the claim text.