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US 5,141,460 AGranted
Method of making a field emission electron source employing a diamond coating
OwnerJames E. Jaskie, Robert C. Kaneinventors
Life of this patent
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Abstract
A field emission electron device employing an electron emitter comprised of a coating of diamond material disposed on a surface of a selectively formed conductive/semiconductive electrode and a method of forming the device including a step wherein carbon ions are implanted at a surface of a conductive/semiconductive electrode to function as nucleation sites for the diamond formation.
Claims16
A method for forming a field emission electron emitter comprising the steps of:
- providing a selectively shaped conductive/semiconductive electrode having a major surface;
- implanting ions, as nucleation sites, onto at least a part of the major surface of the conductive/semiconductive electrode;
- and
- growing diamond crystallites preferentially at at least some of the nucleation sites, such that an electron emitter comprising a coating of diamond disposed on at least a part of the major surface of the selectively shaped conductive/semiconductive electrode is formed.
1 more element
A method for forming a field emission electron emitter comprising the steps of:
- providing a supporting substrate;
- depositing a layer of patternable material on the supporting substrate;
- patterning the layer of patternable material to provide an aperture therethrough;
- providing a selectively shaped conductive/semiconductive electrode disposed substantially within the aperture and on the supporting substrate;
- implanting ions, as nucleation sites, onto at least a part of the conductive/semiconductive electrode;
- removing substantially all of the layer of patternable material;
- and
- growing diamond crystallites preferentially at at least some of the nucleation sites, such that an electron emitter is formed comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
5 more elements
A method for forming a field emission device comprising the steps of:
- providing a supporting substrate;
- depositing a layer of insulator material on the supporting substrate;
- depositing a conductive/semiconductive layer on the layer of insulator material;
- providing a layer of patternable material disposed on the conductive/semiconductive layer;
- patterning the layer of patternable material to provide a patterned aperture therethrough;
- selectively etching an etched aperture through the conductive/semiconductive layer and the layer of insulator material, which etched aperture substantially conforms to the patterned aperture in the patternable material;
- providing a selectively shaped conductive/semiconductive electrode, having a surface, disposed substantially within the etched aperture and on the supporting substrate;
- removing substantially all of the patternable material;
- implanting ions, as nucleation sites, onto at least a part of the surface of the conductive/semiconductive electrode;
- and
- growing diamond crystallites preferentially at at least some of the nucleation sites, such that a field emission device is formed having an electron emitter comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
8 more elements
A method for forming a field emission device comprising the steps of:
- providing a supporting substrate;
- depositing a layer of insulator material on the supporting substrate;
- depositing a conductive/semiconductive layer on the layer of insulator material;
- providing a layer of patternable material disposed on the conductive/semiconductive layer;
- patterning the layer of patternable material to provide at least one patterned aperture therethrough;
- selectively etching an etched aperture through the conductive/semiconductive layer and the layer of insulator material, which etched aperture substantially conforms to the patterned aperture in the patternable material;
- providing a selectively shaped conductive/semiconductive electrode, having a surface, disposed substantially within the etched aperture and on the supporting substrate;
- implanting ions, as nucleation sites, onto at least a part of the surface of the conductive/semiconductive electrode;
- removing substantially all of the layer of patternable material;
- and
- growing diamond crystallites preferentially at at least some of the nucleation sites, such that a field emission device is formed having an electron emitter comprising a coating of diamond disposed on at least a part of the surface of the selectively shaped conductive/semiconductive electrode.
8 more elements
Dependencies are inferred from the claim text.