Thermally stabilized diode laser structure

A thermally stabilized diode laser structure comprising:

• a first semiconductor confinement layer deposited on a substrate, said first confinement layer and said substrate having the same conductivity type,
• an active semiconductor layer deposited on said first confinement layer, said active layer providing light wave generation and propagation under lasing conditions,
• a second semiconductor confinement layer deposited on said active layer, said second confinement layer having an opposing conductivity type to said first confinement layer and said substrate,
• a semiconductor contact layer deposited on said second confinement layer, said contact layer having the same conductivity type as said second confinement layer,
• disordered regions extending through said second confinement layer, said active layer and at least partially through said first confinement layer, said first disordered regions having an opposing conductivity type to said second confinement layer,
• a diffused region formed in each of said disordered regions, said diffused region having an opposing conductivity type to said first disordered region, said diffused region and said disordered region forming a p-n junction,
• at least one diode laser cavity formed between adjacent said first disordered regions,
• at least one contact formed on said contact layer aligned with each of said diode laser cavities,
• at least one contact formed on each of said diffused regions, and
• at least one contact formed on said substrate,
• such that current injected between said at least one contact aligned with said diode laser cavity and said at least one substrate contact will cause light emission from said diode laser cavity,
• such that current injected between said at least one contact aligned with said diffused region and said substrate contact will cause heat generation from said p-n junction, and
• such that heat generated from adjacent p-n junctions on adjacent disordered regions is used to maintain a constant temperature within said diode laser cavity formed between said adjacent first disordered regions.

A thermally stabilized diode laser structure comprising:

• a first semiconductor confinement layer deposited on a substrate, said first confinement layer and said substrate having the same conductivity type,
• an active semiconductor layer deposited on said first confinement layer, said active layer providing light wave generation and propagation under lasing conditions,
• a second semiconductor confinement layer deposited on said active layer, said second confinement layer having an opposing conductivity type to said first confinement layer and said substrate,
• a semiconductor contact layer deposited on said second confinement layer, said contact layer having the same conductivity type as said second confinement layer,
• at least two diordered regions extending through said second confinement layer, said active layer and at least partially through said first confinement layer, said disordered regions having an opposing conductivity type to said second confinement layer,
• at least one diode laser cavity formed between adjacent said disordered regions,
• a resistive region formed intermittently through said contact layer, said resistive region aligned with said at least one diode laser cavity, said resistive region being between adjacent said disordered regions,
• at least one contact formed on said contact layer aligned with each of said at least one diode laser cavity where said resistive region has not been formed,
• at least one contact formed on each of said resistive regions, and
• at least one contact formed on said substrate,
• such that current injected between said at least one contact aligned with said diode laser cavity and said at least one substrate contact will cause light emission from said diode laser cavity,
• such that current injected between said at least one contact aligned with said resistive region and said substrate contact will cause heat generation from said resistive region, and
• such that heat generated from said resistive region on said diode laser cavity is used to maintain a constant temperature within said diode laser cavity formed between said adjacent disordered regions.