Electronic devices utilizing superconducting materials
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A new type superconducting electronic device is described. In the description, a field effect semiconductor device is constructed in accordance with the present invention. A superconducting ceramic material is deposited on the source and drain regions of the semiconductor device with insulating film therebetween functioning as a tunnel current film.
Claims20
In a superconducting device comprising a semiconductor region and a superconducting region electrically connected to said semiconductor region, the improvement comprising a barrier layer formed at an interface between said semiconductor region and said superconducting region, which barrier layer is such that tunneling currents can be passed therethrough.
A superconducting device comprising:
- a pair of oxide superconducting regions;
- a semiconductor region formed between said pair of superconducting regions;
- barrier layers formed at interfaces between said semiconductor region and said superconducting regions for preventing an interaction with each other;
- a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween;
- wherein said barrier layers are such that tunneling currents can be passed therethrough.
A superconducting device comprising:
- a pair of oxide superconducting regions;
- a semiconductor region formed between said pair of superconducting regions;
- barrier layers formed at interfaces between said semiconductor region and said superconducting regions for preventing an interaction with each other;
- a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween;
- wherein said barrier layers are such that tunneling currents can be passed therethrough and comprise a non-oxide material.
A superconducting device comprising:
- a pair of oxide superconducting regions;
- a semiconductor region formed between said pair of superconducting regions;
- barrier layers formed at interface between said semiconductor region and said superconducting regions for preventing an interaction with each other;
- a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween;
- wherein said barrier layers are such that tunneling currents can be passed therethrough and comprise a material selected from the group consisting of silicon nitride, silicon carbide and diamond-like carbon.
Dependencies are inferred from the claim text.