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US 5,135,878 AGranted
Schottky diode
AssigneeSolid State Devices, Inc.
InventorMeir Bartur
Life of this patent
Estimating the term…
Abstract
A Schottky diode has a metal lead electrically connected to the Schottky contact layer wherein the metal lead is metallurgically bonded to the diode for increased reliability, the diode having a Ta--Si--N barrier layer.
Claims25
A method for fabricating a leaded Schottky barrier diode, comprising the steps of:
- forming a Schottky barrier diode having a diffusion barrier layer of tantalum-silicon-nitride;
- forming a metallization layer disposed over the diffusion barrier layer;
- placing a metal lead in proximity to the metallization layer;
- and
- heating the area in proximity to the metallization layer and metal lead to a temperature such that the metal lead metallurgically bonds to the metallization layer.
2 more elements
A method for fabricating an axially leaded Schottky barrier diode, comprising the steps of:
- forming a diffusion barrier layer of tantalum-silicon-nitride disposed over a first side of a silicon substrate;
- forming a metallization layer disposed over the diffusion barrier layer;
- placing a metal lead in proximity to the metallization layer;
- and
- heating the area in proximity to the metallization layer and metal lead to a temperature such that the metal lea metallurgically bonds to the metallization layer.
2 more elements
A method for fabricating an axially leaded Schottky barrier device, comprising the steps of:
- (a) forming a diode by:
- forming a diffusion barrier layer disposed over a first side of a silicon substrate;
- forming a top metallization layer disposed over the diffusion barrier layer;
- and
- forming a bottom metallization layer disposed over a bottom side of the substrate;
- repeating step (a) to form a plurality of diodes;
- stacking the diodes formed above in step (a) so that the bottom metallization of each diode having an underlying diode of the stack abuts the top metallization layer of the underlying diode;
- heating the stack to a temperature such that abutting top and bottom metallization layers of adjacent diodes of the stack metallurgically bond together;
- placing a top metal lead in proximity to the top metallization layer of the top diode of the stack;
- placing a bottom metal lead in proximity to the bottom metallization layer of the bottom diode of the stack;
- and
- heating the areas in proximity to the top and bottom leads to a temperature such that the top metal lead metallurgically bonds to the top metallization layer and the bottom metal lead metallurgically bonds to the bottom metallization layer of the top and bottom diodes, respectively.
9 more elements
A method for fabricating an axially leaded Schottky barrier device, comprising the steps of:
- (a) forming a diode by:
- forming a diffusion barrier layer disposed over a first side of a silicon substrate;
- forming a top metallization layer disposed over the diffusion barrier layer;
- and
- forming a bottom metallization layer disposed over a bottom side of the substrate;
- repeating step (a) to form a plurality of diodes;
- stacking the diodes formed above in step (a) so that the bottom metallization of each diode having an underlying diode of the stack abuts the top metallization layer of the underlying diode;
- placing a top metal lead in proximity to the top metallization layer of the top diode of the stack;
- placing a bottom metal lead in proximity to the bottom metallization layer of the bottom diode of the stack;
- and
- heating the stack to a temperature such that abutting top and bottom metallization layers of adjacent diodes of the stack metallurgically bond together and such that the top metal lead metallurgically bonds to the top metallization layer and the bottom metal lead metallurgically bonds to the bottom metallization layer of the top and bottom diodes, respectively.
8 more elements
Dependencies are inferred from the claim text.