Thin film deposition system

A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil, said foil being coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth on a substrate, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.

A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a corrugated copper foil ranging from 18 to 300 .mu.m thick, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.

A system for thin film deposition by vapor phase growth characterized by having an anti-contamination means fitted therein, said means consisting of a copper foil ranging from 18 to 300 .mu.m thick embossed to have a plurality of irregularities, whereby the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented.

A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing the anti-contamination means in the system characterized in the said anti-contamination means consists of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil.

A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in that said anti-contamination means consists of a treated electrolytic copper foil having fine grains of copper or copper oxide or a mixture of copper and copper oxide precipitated by copper plating on the numerous protuberances of a matte surface of an electrolytic copper foil, said foil being coated with a material which is the same or is harmless and similar to the material to be deposited as a thin film by vapor growth onto a substrate.

A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in the said anti-contamination means is consisting of a corrugated copper foil ranging from 18 to 300 .mu.m thick.

A method for preventing the contamination of devices and the formation of particles in the deposited thin film inside a system for thin film deposition by vapor phase growth by disposing anti-contamination means in the system characterized in that said anti-contamination means is consisting of a copper foil ranging from 18 to 300 .mu.m thick embossed to have a plurality of irregularities.