System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
AssigneeNissin Electric Co., Ltd.
InventorHilton F. Glavish
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AssigneeNissin Electric Co., Ltd.
InventorHilton F. Glavish
Estimating the term…
System for irradiating the surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the surface of the substrate. A scanning system is shown for deflecting the beam in two dimensions relative to a reference axis and a magnetic ion beam transport system following the scanning system is arranged to receive the beam from the scanning system over the range of two dimensional deflections of the scanning system and constructed to impose magnetic field conditions along the beam path of characteristics selected to reorient the two-dimensionally deflected beam to a direction having a predetermined desired relationship with the axis in the two dimensions at the desired instantaneous two dimensional displacement of the beam from the axis, to produce the desired scan of the beam over the substrate. One scanning system includes sequential first and second time-variable-field magnetic scanners, the first scanner having a magnetic gap of volume smaller than that of the second scanner and constructed to scan the beam more rapidly than the second scanner. In another system, the scanners are superposed. The magnetic ion beam transport system presently preferred is a system producing a sequence of three or more quadrupole fields, implemented by a sequence of quadrupoles. Alternate structures are disclosed. The system is capable of depositing atomic or molecular ions with a desired angular and positional uniformity over a wide range of perveance including perveance above 0.02/M[amu].sup.1/2 (mA//keV.sup.3/2) with a constant, adjustable spot size and small beam spread.
An ion implantation system for doping a substrate, by irradiating a surface of the substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for depositing atomic or molecular ions with a desired uniformity by rapid scanning of a beam over a wide range of perveance including perveance above 0.02/M[amu].sup.1/2 (mA/keV.sup.3/2) over the surface of a substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam providing an ion-distributing beam spot in two dimensions over the substrate, the system including:
System for irradiating a surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the substrate, the system including:
An ion implantation system for doping a substrate by irradiating a surface of the substrate with atomic or molecular ions with a desired uniformity the beam providing an ion-distributing beam spot, the system constructed to enable rapid scanning in two dimensions over the substrate of beams over a wide range of perveance including perveance above 0.02/M[amu].sup.1/2 (mA/keV.sup.3/2) and including:
An ion implantation system for doping a substrate by irradiating a surface of the substrate with atomic or molecular ions with a desired uniformity, the beam providing an ion-distributing beam spot, the system constructed to enable rapid scanning in two dimensions over the substrate of beams over a wide range of perveance including perveance above 0.02/M[amu].sup.1/2 (mA/keV.sup.3/2) and including:
A magnetic scanning system constructed to deflect a beam of atomic or molecular ions in a first and second dimension relative to a reference axis, said system having a first and second time-variable-field magnetic scanners in first and second positions along the axis of the system for successively deflecting the beam in the respective dimensions, each magnetic scanner comprising a yoke and pole means of magnetic material and associated energizing coils, and each having a respective deflection circuit and power supply for applying time-varying current to said coils,
A magnetic scanning system for deflecting a beam of atomic or molecular ions in a first and second dimension relative to a reference axis, said system employing respective first and second time-variable-field magnetic scanning magnet means formed of a yoke and pole means of magnetic material and associated energizing coils, and each having a respective deflection circuit and power supply for applying time varying current to said coils,
A magnetic scanning system for deflecting a beam of atomic or molecular ions in a first and second dimension relative to a reference axis, said system employing respective first and second time-variable-field magnetic scanning magnet means formed of a yoke and pole means of magnetic material and associated energizing coils, and each having a respective deflection circuit and power supply for applying time varying current to said coils,
A magnetic scanning system for deflecting a beam of atomic or molecular ions that provides an ion-distributing beam spot in a first and second dimension relative to a reference axis, said system employing respective first and second time-variable-field magnetic scanning magnet means formed of a yoke and pole means of magnetic material and associated energizing coils, and each having a respective deflection circuit and power supply for applying time varying current to said coils,
An ion implantation system for doping a substrate by irradiating a surface of the substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions, the beam providing an ion-distributing beam spot, the system including:
Dependencies are inferred from the claim text.