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AssigneeU.S. Philips Corporation
InventorsEtienne Delhaye, Michel Wolny, Thierry Aguila, Ramesh Pyndiah
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An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level, has a drain-source current characteristic as a function of the gate-source voltage which exhibits a negative transconductance zone beyond a maximum, the slopes of the characteristic on both sides thereof being substantially symmetrical so that two values of the gate-source voltage which are symmetrical with respect to said maximum correspond substantially to the same value of the drain source current, and in that the transistor comprises biasing means ensuring that its operating zone is situated in the region of said characteristic around said maximum.
An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level, characterized in that the transistor has a drain-source current characteristic as a function of gate-source voltage which exhibits a negative transconductance zone beyond a maximum, a slope of the characteristic on each side of said maximum being substantially symmetrical so that two values of the gate-source voltage which are symmetrical with respect to said maximum correspond substantially to the same value of the drain-source current, and in that the transistor comprises biasing means for ensuring that its operating zone is situated in a region of said characteristic around said maximum.
Dependencies are inferred from the claim text.