Method for manufacturing a read only memory device using a focused ion beam to alter superconductivity
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYoji Mashiko, Tadashi Nishioka
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Abstract
A read only memory device comprises a first electrode, and a second electrode arranged overlapping with the first electrode so as to be geometrically in connection at the intersection. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed electrode out of said electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at the intersection corresponding to a prescribed stored data. In the manufacturing method, the first and second electrodes are formed and, thereafter, a high resistance region is formed by irradiating focused ion beam.
Claims12
A method for manufacturing a read only memory device, comprising the steps of:
- preparing a semiconductor substrate;
- forming an active element on said semiconductor substrate;
- forming a first electrode having one end electrically connected to an input/output portion of said active element and a second electrode arranged overlapping with the first electrode so as to be geometrically connected to the second electrode at the intersection on said semiconductor substrate, at least one of said first and second electrodes being formed of a ceramics system high temperature superconductor;
- and
- forming a high resistance region of non-superconductive material by irradiating with a focusd ion beam an intersection which corresponds to a prescribed data to be stored.
A method for manufacturing a read only memory device, comprising the steps of:
- preparing a semiconductor substrate;
- forming an active element on said semiconductor substrate;
- forming a first electrode having one end electrically connected to an input/output portion of said active element and a second electrode arranged overlapping with the first electrode so as to be geometrically connected to the second electrode at the intersection on said semiconductor substrate, at least one of said first and second electrodes being formed of a ceramics system high temperature superconductor;
- and
- forming a high resistance region of a non-superconductive material at an intersection corresponding to prescribed data to be stored therein by irradiating the high temperature superconductor.
Dependencies are inferred from the claim text.