Apparatus for planarizing a dielectric formed over a semiconductor substrate
AssigneeIntel Corporation
InventorsSeiichi Morimoto, Robert J. Patterson
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AssigneeIntel Corporation
InventorsSeiichi Morimoto, Robert J. Patterson
Estimating the term…
An improved method for planarizing the surface of an dielectric deposited over a semiconductor substrate. The substrate is pressed face down against a table which has been coated with an abrasive material. In this way, the upper surface of the interlayer dielectric contacts the abrasive. Rotational movement of the wafer relative to the table facilitates removal of the protruding portions of the interlayer dielectric by the abrasive. Post-planarization step height variation is minimized by simultaneously cooling the table and the abrasive material during the abrasive or polishing process. By maintaining the table and the abrasive at about 10 degrees Celcius the step height variation is reduced by a factor of 2 over that normally realized in the prior art.
An apparatus for planarizing the upper surface of a dielectric deposited on a semiconductor substrate comprising:
Dependencies are inferred from the claim text.