Induced junction chalcopyrite solar cell

A solar cell comprising, in sequence, the following layer structure:

• a molybdenum-coated glass substrate;
• a polycrystalline p-conductive layer of I-III-VI.sub.2 chalcopyrite material having a thickness of approximately 1 to about 2 .mu.m on said substrate;
• a barrier layer composed of amorphous silicon dioxide deposited at a maximum thickness of approximately 2 nm;
• a close-meshed aluminum grid on the barrier layer;
• and
• an amorphous silicon nitride applied on the barrier layer at a thickness of approximately 50 to about 200 nm and containing a plurality of layers of molecules of cesium chloride at least at its boundary surface to the barrier layer.

A solar cell having a layer structure comprising, in sequence, the following layer structure:

• a substrate having an electrically conductive, first electrode;
• a p-conductive, polycrystalline semiconductor layer chosen from the group consisting of copper-indium-diselenide, copper-gallium-diselenide, copper-indium-disulfide, and copper-gallium-disulfide;
• a barrier layer of an electrically non-conductive material;
• a discontinuous second electrode for receiving generated current;
• and
• an antireflection layer having stationary positive charges at least at its boundary surface to the barrier layer, wherein the stationary positive charges induce a negatively charged inversion layer in the boundary surface region of the semiconductor layer relative to the barrier layer, whereby the negatively charged inversion layer functions as an emitter for the space charge zone in the semiconductor layer.