Dielectric medium for capacitor of semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorSangin Lee
Life of this patent
Estimating the term…
Abstract
A dielectric medium for the capacitor of a semiconductor device is disclosed. The dielectric material is prepared by replacing Sr and Ba in (Sr, Ba)Nb.sub.2 O.sub.6 with La, and the replacement is carried out by adding 2 mole % or more of La.sub.2 O.sub.3 to (Sr,Ba)Nb.sub.2 O.sub.6, thereby forming a composition (Sr.sub.x Ba.sub.1-x).sub.1-(3/2)y La.sub.y Nb.sub.2 O.sub.6 (0.25.ltoreq.x.ltoreq.0.5, 0.04.ltoreq.y). According to the present invention, the dielectric medium has the characteristics that the crystal structure is not affected even over the Curie temperature, and that a high dielectric constant and a low dielectric loss coefficient are maintained.
Claims4
A dielectric medium for the capacitor of semiconductor device, comprising a composition of (Sr.sub.x Ba.sub.1-x).sub.1-(3/2)y La.sub.y Nb.sub.2 O.sub.6 (0.25.ltoreq.x.ltoreq.0.5, 0.04.ltoreq.y).
A semiconductor device using a dielectric medium on the capacitor thereof, said dielectric medium comprising:
- a composition of (Sr.sub.x Ba.sub.1-x).sub.1-(3/2)y La.sub.y Nb.sub.2 O.sub.6 (0.25.ltoreq.x.ltoreq.0.5, 0.04.ltoreq.y).
Dependencies are inferred from the claim text.