US 5,122,251 A · High density plasma deposition and etching apparatus

Abstract

A high density ionized plasma is generated in a source chamber using a single loop disposed in a plane that intercepts the central axis of the source chamber perpendicularly or at a lesser angle and spaced from the closed end of the chamber. With a longitudinal magnetic field and an inert or reactive gas injected into the source chamber, excitation of the antenna with RF energy in the 5 to 30 MHz establishes the M=0 excitation mode or components of both the M=0 and M=1 modes. Low frequency whistler waves are created which generate a uniform and high density plasma and high plasma current. The plasma source thus defined is used in combination with process chamber configurations in which static shaped or time modulated magnetic fields enhance the distribution and uniformity of the plasma at a substrate to be etched, deposited or sputtered.

Claims34

Dependent claims

A system for generating a high density plasma comprising:

a plasma confinement chamber of cylindrical form;
means for injecting a gas to be ionized into the chamber;
antenna means comprising a single loop element encompassing the cylindrical chamber, the loop element being disposed in a plane at an angle of in excess of 45.degree. to the central axis of the chamber, and positioned in an intermediate region along the length of the chamber;
means disposed adjacent the chamber and the antenna means for generating a longitudinal magnetic field in the chamber;
and
means coupled to the antenna means for exciting the loop element with radio frequency energy.

3 more elements

A plasma processing apparatus for processing a substrate, comprising:

(a) an antenna radiating electromagnetic waves in the RF range of frequencies, consisting of single current loop located outside but surrounding closely a plasma generating chamber;
(b) a cylindrical plasma generation chamber, the plasma generation chamber being proximate to and in electromagnetic communication with the antenna, such that the longitudinal axis of the cylindrical plasma generation chamber and the plane of the current loop are either perpendicular or at an angle less than 90.degree.;
(c) a first fluid injector, the first fluid injector introducing a fluid into the plasma generation chamber, thereby permitting the creation of a plasma within the plasma generation chamber;
(d) a magnetic field generator, the magnetic field generator generating a magnetic field substantially parallel to the longitudinal axis of the plasma generation chamber;
(e) a process chamber, the plasma being transported to the process chamber by the magnetic field;
(f) a second fluid injector, the second fluid injector introducing a fluid into the process chamber;
(g) a current controller, the current controller controlling the current within the magnetic field generator, thereby controlling plasma shape;
(h) a substrate holder, the substrate holder residing within the process chamber;
and
(i) a substrate, the substrate being mounted on the substrate holder, the substrate thereby being subjected to the plasma.

7 more elements

Dependencies are inferred from the claim text.

High density plasma deposition and etching apparatus

Life of this patent

High density plasma deposition and etching apparatus

Life of this patent

Abstract

Claims34