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US 5,117,267 AGranted
Semiconductor heterojunction structure
AssigneeSumitomo Electric Industries, Ltd.
InventorsTsunenobu Kimoto, Tadashi Tomikawa, Nobuhiko Fujita
Life of this patent
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Abstract
A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.
Claims9
A semiconductor heterojunction structure comprising:
- a p-type diamond layer;
- an n-type cubic boron nitride layer on a first surface of said p-type diamond layer;
- and
- a p-type cubic boron nitride layer on a second surface of the p-type diamond layer, said second surface being opposite said first surface.
1 more element
A light emitting element having a semiconductor heterojunction structure comprising:
- a p-type diamond layer;
- an n-type cubic boron nitride layer on a first surface of said p-type diamond layer;
- and
- a p-type cubic boron nitride layer on a second surface of the p-type diamond layer, said second surface being opposite said first surface.
1 more element
Dependencies are inferred from the claim text.