Apparatus and process for producing a thin layer on a substrate
OwnerHelmut Haberlandinventor
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OwnerHelmut Haberlandinventor
Estimating the term…
Ionized cluster beam (ICB) deposition has received considerable attention since its introduction in 1972 by Takagi et al, at Kyoto University because of its potential for low temperature film growth. While further investigation of many aspects of ICB deposition is warranted, it is first necessary to determine with some certainty whether large clusters are being produced. A complete analysis of the Eaton ICB source involving computer calculation of the potential fields and computer simulation of the electrons and ions as they react to and influence these fields provides an in-depth understanding of the dynamics that influence the final ion beam characteristics. A high resolution time-of-flight mass spectrometer was developed to experimentally investigate the cluster size distribution. No evidence of large clusters was found down to a level more than two orders of magnitude below what the Kyoto University group has reported. A computer analysis of the three Kyoto University cluster size experiments that form the foundation of ICB has shown that the potential fields in the ionization areas are critically distorted by either space-charge effects or design flaws, both of which are serious enough to invalidate the experiments. The theory behind large cluster production and the body of indirect evidence attributed to the presence of large clusters are not convincing by themselves so it is concluded that a Takagi-type source does not produce large clusters in quantities capable of affecting film growth.
An apparatus for producing a thin layer of coating material on a substrate, comprising:
A process for producing a thin layer of a coating material on a substrate, comprising the steps of generating of ionized clusters of the coating material and accelerating the clusters onto the substrate by an electric field, wherein the step of generating the ionized clusters comprises transferring the material into the gas phase by sputtering and transferring generated particles into a gas atmosphere having a pressure of at least 1 Pa in which clusters are formed by collision with gas atoms.
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