Float zone processing of particulate silicon
AssigneeHemlock Semiconductor Corporation
InventorsMichael Bourbina, James R. McCormick, Scott A. Wheelock
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Abstract
The present invention is a float-zone process for forming particulate silicon into monocrystalline silicon. The process employs a reusable silicon conduit having a lower end heated to form a melt zone and an upper end provided with a means for delivering a controlled amount of particulate silicon to the melt zone. A monocrystal silicon seed is used to pull a monocrystalline silicon ingot from the melt zone and particulate silicon is added to the melt zone to replenish silicon removed as monocrystalline silicon.
Claims9
A float-zone process for preparation of monocrystalline silicon from particulate silicon, the process comprising:
- (A) feeding particulate silicon, through a silicon conduit contacted with a silicon melt zone, at a feed rate controlled to maintain an essentially constant volume for the melt zone,
- (B) contacting the silicon melt zone with a monocrystal silicon seed, and
- (C) withdrawing the monocrystal silicon seed from the silicon melt zone at a rate effective for growing a monocrystalline silicon ingot from the silicon melt zone.
A float-zone process for preparation of a silicon ingot from particulate silicon, the process comprising:
- (A) feeding particulate silicon, through a silicon conduit contacted with a silicon melt zone, at a feed rate controlled to maintain an essentially constant volume for the silicon melt zone,
- (B) contacting the silicon melt zone with a silicon seed, and
- (C) growing a silicon ingot, by withdrawing the silicon seed from the silicon melt zone at a controlled rate effective for growing a silicon ingot from the silicon melt zone.
Dependencies are inferred from the claim text.