Silica-based anti-reflective planarizing layer
AssigneeNCR Corporation
InventorsDerryl D. J. Allman, Brian R. Lee
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Abstract
There is disclosed a dyed, spin-on glass composition with a high carbon content for use in providing antireflective planarizing layers on substrates such as semiconductor silicon wafers. These layers can be used as hard masks by etching patterns therein. These hard masks can be used in multilayer resists and in making lithography masks. Methods for producing these hard-masks are also provided.
Claims15
A dyed spin-on glass composition comprising a solution of crosslinked polyorganosiloxane and a dye that is stable at temperatures of 350.degree.-500.degree. C. and absorbs light, said polyorganosiloxane having at least 30 atomic weight percent carbon and an aminoorganotrialkoxysilane incorporated therein, wherein the alkoxy groups have 1-4 carbon atoms.
A dyed spin-on glass composition comprising a solution of polymethylphenylsilsesquioxane and an inorganic dye that absorbs light, said polymethylphenylsilsesquioxane polymer having a carbon content of at least 30 weight percent and an aminoorganotrialkoxy silane incorporated therein, wherein the alkoxy groups have from 1-4 carbon atoms.
A method for producing a hard mask which comprises:
- a) depositing on a substrate, an anti-reflective planar, silica-based layer derived from a dyed spin-on glass composition, said dyed spin-on glass composition comprising a solution of crosslinked polyorganosiloxane and an inorganic dye that absorbs light, said polyorganosiloxane having at least 30 atomic weight percent carbon and an aminoorganotrialkoxysilane incorporated therein, wherein the alkoxy groups have 1-4 carbon atoms;
- b) depositing a substantially uniform layer of photoresist material on the silica-based layer;
- c) illuminating portions of said layer of photoresist with light in a predetermined pattern;
- d) developing the photoresist so as to remove portions differentiated by the illumination with light and expose portions of the underlying silica-based layer;
- and
- e) etching the exposed portions of the underlying silica-based layer so as to expose the underlying substrate in a pattern substantially identical to the illuminated portions of said photoresist.
Dependencies are inferred from the claim text.