Programmable depth first-in, first-out memory
AssigneeTexas Instruments Incorporated
InventorsM. Dwayne Ward, Kenneth L. Williams
Life of this patent
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AssigneeTexas Instruments Incorporated
InventorsM. Dwayne Ward, Kenneth L. Williams
Estimating the term…
A first-in, first-out memory (10) can store a programmable number of data words at respective address locations within a memory (76). A read address generator (50, 58) generates a read pointer for pointing to a read address location in the memory (76). A depth address generator (42) points to a depth address location in the memory that is displaced from the read address location by a predetermined number of address locations. This depth address generator (42) is incremented to a next read depth address responsive to a read pulse (20) issued from a read/write controller (12). A write address generator (80) points to a write address location within memory (76). A comparator (52) compares the value stored in the write address generator (42) to the read depth address location stored in depth address generator (42) and is operable to generate a FULL memory status flag (24) responsive to their equality. Preferably, the comparator (52) also compares the read address to the write address, and is operable to generate an EMPTY status flag (26) responsive to their equality.
A first-in, first-out memory for storing a programmable and reprogrammable number of data words therein, comprising:
A first-in, first-out memory having a plurality of address locations for storing a programmable and reprogrammable number of data words, comprising:
A first-in, first out memory for storing a programmable number of data words at a plurality of address locations in said memory, comprising:
A memory array having a plurality of addressable locations, comprising:
A method for programming the depth of a first-in, first-out memory having a plurality of address locations, comprising the steps of:
Dependencies are inferred from the claim text.