Scanning electron microscope for observation of cross section and method of observing cross section employing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKunihiro Hosono
Life of this patent
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKunihiro Hosono
Estimating the term…
Disclosed are a scanning electron microscope for cross section observation capable of cutting more accurately a cross section of a specific portion of semiconductor wafer in a shorter time, and a cross section observing method employing such a microscope. The scanning electron microscope includes an SEM column 100, an FIB column 200 mounted together with SEM column 100, and a reflected-electron detector 21 for detecting electrons to be reflected from the semiconductor wafer by scanning with an electron beam 30 from the SEM. Thus, since a process of cutting a cross section to be observed by scanning with an ion beam 31 from FIB column 200 can be observed in real time by employing the reflected electrons of electron beam 30 from SEM column 100, a specific portion of the cross section can be cut more accurately in a shorter time.
Apparatus for observing cross-section during cutting into the surface of a semiconductor wafer, comprising:
A cross section cutting and observing method employing a scanning electron microscope for cross section observation for directing an electron beam to a cross section of a semiconductor wafer to observe a state of the cross section of said semiconductor wafer, said method comprising the steps of:
A method of cutting a cross-section of a semiconductor wafer, comprising the steps of:
Dependencies are inferred from the claim text.