Method of stacking semiconductor substrates for fabrication of three-dimensional integrated circuit

A semiconductor substrate stacking method comprising the steps of:

• preparing first and second thin film devices each in the form of a thin film having an upper surface connection electrode formed on an upper surface thereof and an undersurface connection electrode formed on an undersurface thereof, each of the thin film devices being bonded at its upper surface thereof to a support plate by adhesive;
• stacking and bonding the first thin film device onto a base substrate having a device formed thereon and a connection electrode formed on the device, in such a manner that the device formed on the base substrate faces the undersurface of the first thin film device and the connection electrode formed on the device formed on the base substrate is in alignment with and in contact with the undersurface connection electrode formed on the first thin film device;
• removing the support plate and the adhesive of the first thin film device so that the upper surface of the first thin film device and the upper surface connection electrode formed on the the upper surface of the first thin film device are exposed;
• stacking and bonding the second thin film device onto the first thin film device stacked on the base substrate, in such a manner that the device formed on the first thin film device faces the undersurface of the second thin film device and the upper surface connection electrode formed on the device formed on the first thin film device is in alignment with and in contact with the undersurface connection electrode formed on the second thin film device;
• and
• removing the support plate and the adhesive of the second thin film device so that the upper surface of the second thin film device and the upper surface connection electrode formed on the the upper surface of the second thin film device are exposed.