Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film
AssigneeKabushiki Kaisha Kobe Seiko Sho
InventorsKoichi Miyata, Kazuo Kumagai, Koji Kobashi, Yuichi Matsui, Akimitsu Nakaue
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Abstract
A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.
Claims5
A Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond film, comprising:
- a deposition of a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6 and having boron/carbon concentration ratio greater than 0.01 ppm and less than 20 ppm;
- forming an ohmic contact on the back of the p-type Si substrate;
- and forming a metal electrode on the B-doped p-type polycrystalline diamond thin film.
A Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond film, comprising the steps of:
- polishing a surface of a p type silicon substrate with a diamond grit having submicron diamond particles;
- placing said substrate in a CVD system;
- heating said substrate to 800.degree. C.;
- flowing gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6 through said CVD system, wherein CH.sub.4 gas constitutes 0.5 percent of the flowing gas, the ratio of boron to carbon in said gas being between 0.01 and 20, to one million, the gas flow rate being sufficient to maintain the pressure in the system at 31.5 Torr;
- igniting a microwave plasma in said CVD chamber;
- growing a boron doped diamond film on said surface, for several hours;
- forming an ohmic contact on the uncoated surface of said silicon substrate;
- and
- forming a Schottky contact upon said diamond film.
Dependencies are inferred from the claim text.